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European Gallium Arsenide and Other Semiconductor Application Symposium
European Gallium Arsenide and Other Semiconductor Application Symposium
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1.
A novel closed-form approach for comparing the Q-factor responses between the asymmetric and symmetric on-chip inductors
机译:
一种用于比较非对称和对称片式电感器之间的Q因子响应的新型闭合形式方法
作者:
Horng T.S.
;
Huang C.H.
;
Han F.Y.
;
Li C.J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Q-factor;
equivalent circuits;
inductors;
transmission line theory;
Q-factor responses;
asymmetric on-chip inductors;
equivalent transmission-line circuit;
quality factor response;
2.
Thermal management of power HBT in pulsed operating mode
机译:
脉冲操作模式下功率HBT的热管理
作者:
Floriot D.
;
Jacquet J.-C.
;
Chartier E.
;
Coupat J.-M.
;
Eudeline P.
;
Auxemery P.
;
Blanck H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium arsenide;
heterojunction bipolar transistors;
indium compounds;
power transistors;
10 to 3 W;
InGaP-GaAs;
diamond approach;
power HBT transistor;
pulsed operating mode;
radar applications;
thermal management;
thermal sponge;
thermal vari;
3.
Characterization of low-temperature ultrananocrystalline diamond RF MEMS resonators
机译:
低温超晶钻石RF MEMS谐振器的表征
作者:
Pacheco S.P.
;
Zurcher P.
;
Young S.R.
;
Weston D.
;
Dauksher W.J.
;
Auciello O.
;
Carlisle J.A.
;
Kane N.
;
Birrell J.P.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Young's modulus;
diamond;
electric breakdown;
micromechanical resonators;
nanostructured materials;
thin films;
10 MHz;
14243 m/s;
15 to 25 V;
550 degC;
710 GPa;
C;
DC tunability;
Young modulus;
acoustic velocity;
breakdown voltage;
electro-mechanical pull-down;
electros;
4.
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates
机译:
A型和蓝宝石基板上GAN HEMTS的全面A级A级电力和负载拉力
作者:
Camarchia V.
;
Guerrieri S.D.
;
Pirola M.
;
Teppati V.
;
Ghione G.
;
Peroni M.
;
Lanzieri C.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium compounds;
power HEMT;
thermal conductivity;
wide band gap semiconductors;
Al/sub 2/O/sub 3/;
GaN;
HEMTs;
SiC;
defects;
extensive power characterization;
load-pull measurements;
power sweep;
scaling rules;
thermal degradation;
thermal resi;
5.
A 17 to 26 GHz micromixer in SiGe BiCMOS technology
机译:
SiGE BICMOS技术的17至26 GHz MicroMixer
作者:
Mingquan Bao
;
Yinggang Li
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
BiCMOS analogue integrated circuits;
Ge-Si alloys;
MMIC mixers;
semiconductor materials;
-3.6 dB;
17 to 26 GHz;
18.2 dB;
3.3 V;
86 mW;
BiCMOS technology;
Gilbert mixer;
SiGe;
local oscillator;
micromixer;
6.
50 Gb/s DFF and decision circuits in InP DHBT technology for ETDM systems
机译:
用于ETDM系统的INP DHBT技术50 GB / S DFF和决策电路
作者:
Konczykowska A.
;
Jorge F.
;
Riet M.
;
Moulu J.
;
Godin J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
bipolar integrated circuits;
bipolar transistor circuits;
decision circuits;
heterojunction bipolar transistors;
indium compounds;
optical receivers;
optical transmitters;
time division multiplexing;
40 to 50 Gbit/s;
DFF;
DHBT technology;
ETDM;
7.
Advanced multi chip module solutions for RF and digital space applications: status and perspective
机译:
用于RF和数字空间应用的先进的多芯片模块解决方案:状态和透视
作者:
Comparini M.C.
;
Di Marcantonio U.
;
Feudale M.
;
Piloni V.
;
Suriani A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
aerospace engineering;
integrated circuit interconnections;
interconnections;
multichip modules;
thermal management (packaging);
RF applications;
advanced interconnection techniques;
digital hybrids;
digital space modules;
equipment hardware;
multichip module solu;
8.
GaN H-FET development at QinetiQ
机译:
Qinetiq的GaN H-FET开发
作者:
Martin T.
;
Uren M.J.
;
Balmer R.S.
;
Soley D.
;
Wallis D.J.
;
Hilton K.P.
;
Maclean J.O.
;
Munday A.G.
;
Hydes A.J.
;
Hayes D.G.
;
Oxley C.H.
;
McGovern P.
;
Tasker P.J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
aluminium compounds;
amplifiers;
gallium compounds;
high electron mobility transistors;
ohmic contacts;
vapour phase epitaxial growth;
wide band gap semiconductors;
0.25 mum;
0.8 mum;
AlGaN-GaN;
H-FET development;
MOVPE;
Ohmic contacts;
X-ray det;
9.
InP/InGaAs resonant tunneling diode with six-route negative differential resistances
机译:
INP / INGAAS共振隧道二极管,具有六路径的负差分电阻
作者:
Jung-Hui Tsai
;
Yu-Chi Kang
;
Wen-Shiung Lour
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium arsenide;
indium compounds;
negative resistance;
p-n heterojunctions;
resonant tunnelling diodes;
semiconductor superlattices;
25 angstrom;
293 to 298 K;
50 angstrom;
InP-InGaAs;
high-field domain;
miniband structures;
operation biases;
p;
10.
10 Gbit/s differential amplifier demonstrating striplines in 0.18 /spl mu/m CMOS technology
机译:
10 Gbit / s差分放大器在0.18 / SPL MU / M CMOS技术中展示带状线
作者:
Milivojevic B.
;
Gu Z.
;
Thiede A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
CMOS integrated circuits;
differential amplifiers;
strip lines;
10 Gbit/s;
6 dB;
6.2 GHz;
CMOS technology;
differential amplifier;
eye diagram;
shielding;
single-phase gain;
strip lines;
test circuit;
11.
Progress in microwave GaN HEMT grown by MBE on silicon and Smart Cut/spl trade/ engineered substrates for high power applications
机译:
MBE在硅和智能切割贸易/工程基板上以MBE种植的微波GaH HEMT的进展
作者:
Larheche H.
;
Faure B.
;
Richtarch C.
;
Letertre F.
;
Langer R.
;
Bove P.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
aluminium compounds;
gallium compounds;
high electron mobility transistors;
microwave field effect transistors;
molecular beam epitaxial growth;
semiconductor epitaxial layers;
semiconductor growth;
silicon compounds;
wide band gap semicondu;
12.
KORRIGAN - a comprehensive initiative for GaN HEMT technology in Europe
机译:
Korrigan - 欧洲GaN Hemt技术的全面倡议
作者:
Gauthier G.
;
Mancuso Y.
;
Murgadella F.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium compounds;
high electron mobility transistors;
wide band gap semiconductors;
Europe;
European industrial and university partners;
GaN;
HEMT technology;
KORRIGAN;
MMIC;
circuit;
module demonstrators;
stand alone European supply chain and;
13.
A 4.8-6 GHz IEEE 802.11 a WLAN SiGe-bipolar power amplifier with on-chip output matching
机译:
A 4.8-6 GHz IEEE 802.11带片上输出匹配的WLAN SIGE-BIPOLAR功率放大器
作者:
Bakalski W.
;
Vasylyev A.
;
Simburger W.
;
Kall M.
;
Schmid A.
;
Kitlinski K.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Ge-Si alloys;
MMIC power amplifiers;
bipolar MMIC;
semiconductor materials;
wireless LAN;
1 to 2.4 V;
22 percent;
28.5 percent;
4.8 to 6 GHz;
IEEE 802.11 a WLAN;
SiGe;
SiGe-bipolar power amplifier;
error vector magnitude;
on-chip output matching;
wireless LAN;
14.
A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers
机译:
具有50 GHz带宽和40 Gbits光接收器的低噪声的变质GaAs HEMT分布式放大器
作者:
Wolf G.
;
Demichel S.
;
Leblanc R.
;
Blache F.
;
Lefevre R.
;
Dambrine G.
;
Happy H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
III-V semiconductors;
distributed amplifiers;
gallium arsenide;
microwave amplifiers;
millimetre wave amplifiers;
optical receivers;
photodiodes;
0.4 W;
12.5 dB;
40 Gbyte/s;
50 GHz;
9 to 40 GHz;
GaAs;
circuit consumption;
eye diagrams measurem;
15.
A monolithic integrated 180 GHz SiGe HBT push-push oscillator
机译:
单片集成180 GHz SIGE HBT推式振荡器
作者:
Roux P.
;
Baeyens Y.
;
Wohlgemuth O.
;
Chen Y.K.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Ge-Si alloys;
heterojunction bipolar transistors;
integrated circuit noise;
millimetre wave oscillators;
monolithic integrated circuits;
phase noise;
semiconductor materials;
1 MHz;
180 GHz;
200 GHz;
275 GHz;
SiGe;
maximum oscillation frequency;
monolithic integrated;
16.
Electrical and structural properties of low-temperature-grown In/sub 0.53/Ga/sub 0.47/As on GaAs using an InGaAlAs metamorphic buffer
机译:
使用InGaalas变质缓冲液的低温生长/亚/次/ GA / SUB 0.47 /如GaAs上的电气和结构性能
作者:
Seong June Jo
;
Soo-Ghang Ihn
;
Tae-Woo Kim
;
Ki-Ju Yee
;
Moon-Seop Hwang
;
Dong-Han Lee
;
Jong-In Song
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
aluminium compounds;
annealing;
buffer layers;
carrier lifetime;
dislocations;
gallium arsenide;
gallium compounds;
indium compounds;
GaAs;
In/sub 0.53/Ga/sub 0.47/As;
InGaAlAs;
M-buffer;
carrier lifetime;
electrical properties;
metamorphic buffer;
17.
European Microwave Week 2005
机译:
欧式微波2005年
作者:
anonymous
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
18.
Are we there yet? - a metamorphic HEMT and HBT perspective
机译:
我们到了吗? - 一个变质的HEMT和HBT角度
作者:
Geok Ing Ng
;
Radhakrishnan K.
;
Hong Wang
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium arsenide;
heterojunction bipolar transistors;
high electron mobility transistors;
indium compounds;
GaAs;
HBT perspective;
InP;
metamorphic HEMT;
metamorphic epitaxy technique;
19.
Enabling RFCMOS solutions for emerging advanced applications
机译:
为新兴应用程序启用RFCMOS解决方案
作者:
Pekarik J.J.
;
Coolbaugh D.D.
;
Cottrell P.E.
;
Csutak S.M.
;
Greenberg D.R.
;
Jagannathan B.
;
Sanderson D.I.
;
Wagner L.
;
Walko J.
;
Xudong Wang
;
Watts J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
CMOS integrated circuits;
radiofrequency integrated circuits;
CMOS solutions;
RF applications;
high-performance modular technology;
scalable devices models;
20.
Status of AlGaN/GaN HEMT technology - a UCSB perspective
机译:
Algan / GaN HEMT技术的现状 - UCSB透视
作者:
Mishra U.K.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
aluminium compounds;
gallium compounds;
high electron mobility transistors;
nitrogen compounds;
wide band gap semiconductors;
AlGaN-GaN;
HEMT;
current slump elimination;
field plates;
high electron mobility transistors;
21.
An overview of microwave component requirements for future space applications
机译:
未来空间应用的微波组件要求概述
作者:
Barnes A.R.
;
Boetti A.
;
Marchand L.
;
Hopkins J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
CMOS integrated circuits;
III-V semiconductors;
gallium compounds;
indium compounds;
microwave devices;
packaging;
radiofrequency integrated circuits;
satellite communication;
wide band gap semiconductors;
ESA missions;
European Space Agency missions;
GaN;
InSb;
MEMS;
22.
An empirical large signal model for silicon carbide MESFETs
机译:
碳化硅MESFET的经验大信号模型
作者:
Sayed A.
;
Boeck G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
power MESFET;
semiconductor device models;
silicon compounds;
wide band gap semiconductors;
wideband amplifiers;
5 W;
SiC;
empirical large signal model;
silicon carbide MESFET;
ultra broadband power amplifier;
23.
SiGe power HBT design considerations for IEEE 802. 11 applications
机译:
IEEE 802的SiGe Power HBT设计考虑因素。11应用程序
作者:
Ningyue Jiang
;
Zhenqiang Ma
;
Pingxi Ma
;
Reddy V.
;
Racanelli M.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
UHF bipolar transistors;
heterojunction bipolar transistors;
microwave bipolar transistors;
power bipolar transistors;
resistors;
semiconductor materials;
thermal stability;
wireless LAN;
2.4 GHz;
5.8 GHz;
802.11a wireless L;
24.
GaN-based FETs for microwave high-power applications
机译:
基于GaN的微波大功率应用的FET
作者:
Shimawaki H.
;
Miyamoto H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium compounds;
microwave amplifiers;
microwave field effect transistors;
millimetre wave amplifiers;
millimetre wave field effect transistors;
wide band gap semiconductors;
156 W;
2 GHz;
230 W;
30 GHz;
4 GHz;
5.8 W;
AlGaN-GaN;
CW output power;
25.
Partially depleted CMOS SOI technology for low power RF applications
机译:
用于低功耗RF应用的部分耗尽的CMOS SOI技术
作者:
Tinella C.
;
Gianesello F.
;
Gloria D.
;
Raynaud C.
;
Delatte P.
;
Engelstein A.
;
Fournier J.M.
;
Benech P.
;
Jomaah J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
CMOS integrated circuits;
passive networks;
radiofrequency integrated circuits;
silicon-on-insulator;
substrates;
BiCMOS;
CMOS SOI technology;
RF circuit;
Si;
bulk silicon processes;
high-quality passives components;
low power RF applications;
mm-wave passive integr;
26.
CMOS devices and circuits for microwave and millimetre wave applications
机译:
用于微波和毫米波应用的CMOS器件和电路
作者:
Ferndahl M.
;
Motlagh B.M.
;
Masud A.
;
Angelov I.
;
Vickes H.-O.
;
Zirath H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
CMOS integrated circuits;
frequency multipliers;
microwave amplifiers;
microwave integrated circuits;
millimetre wave amplifiers;
millimetre wave integrated circuits;
millimetre wave mixers;
20 GHz;
40 GHz;
5.6 dB;
60 GHz;
7.3 dB;
CMOS circuits;
CMOS devices;
RF front;
27.
Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN
机译:
基于InGaP / GaAs HBT的低噪声和高线性LNA为5.3 GHz WLAN
作者:
Seong-Sik Myoung
;
Sang-Hoon Cheon
;
Jong-Gwan Yook
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
MIM devices;
capacitors;
field effect transistors;
gallium arsenide;
gallium compounds;
heterojunction bipolar transistors;
indium compounds;
low noise amplifiers;
wireless LAN;
13 dB;
2.1 dB;
20.1 dB;
5.3 GHz;
HBT;
InGaP-GaAs;
LNA;
MIM capacitors;
W;
28.
Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs
机译:
开关MMIC设计精确谐波建模的先进曲折栅极P-HEMT模型
作者:
Holm M.A.
;
Brookbanks D.M.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
MMIC;
harmonic generation;
integrated circuit design;
microwave switches;
Parker-Skellern IV form;
advanced meander gate p-HEMT model;
harmonic generation;
harmonic modeling;
meander-gate based switches;
switch MMIC designs;
29.
A low-cost high performance GaAs MMIC package using air-cavity ceramic quad flat non-leaded package up to 40 GHz
机译:
低成本高性能GaAs MMIC封装,使用空气腔陶瓷四边形扁平的非铅封装,高达40 GHz
作者:
Young-Ho Suh
;
Richardson D.
;
Dadello A.
;
Mahon S.
;
Harvey J.T.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
MIMIC;
alumina;
ceramic packaging;
gallium arsenide;
integrated circuit packaging;
Al/sub 2/O/sub 3/;
GaAs;
MMIC package;
air-cavity ceramic package;
alumina substrate;
buffer amplifier;
low noise amplifier;
quad flat nonleaded package;
30.
Main achievements to date toward the use of RF MEMS into space satellite payloads
机译:
迄今为止迄今为止使用RF MEMS进入太空卫星有效载荷的主要成就
作者:
Vendier O.
;
Paillard M.
;
Legay H.
;
Schaffauser C.
;
Forrestier S.
;
Caille G.
;
Drevon C.
;
Cazaux J.L.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
microswitches;
microwave switches;
Alcatel Space;
RF MEMS;
RF MEMS switches;
microelectromechanical systems;
microwave field;
space satellite payloads;
31.
On-state safe operating area of GaAs MESFET defined for non linear applications
机译:
用于非线性应用的GaAs MESFET的状态安全操作区域
作者:
Ismail N.
;
Malbert N.
;
Labat N.
;
Touboul A.
;
Muraro J.-L.
;
Brasseau F.
;
Langrez D.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
Schottky gate field effect transistors;
gallium arsenide;
GaAs;
MESFET;
drain-gate voltage;
ionization regime;
nonlinear applications;
off-state stresses;
on-state stresses;
32.
A simple technique for measuring the thermal impedance and the thermal resistance of HBTs
机译:
一种测量热阻抗和HBT热阻的简单技术
作者:
Lonac J.A.
;
Santarelli A.
;
Melczarsky I.
;
Filicori F.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
electric reactance measurement;
gallium arsenide;
gallium compounds;
heterojunction bipolar transistors;
indium compounds;
power bipolar transistors;
HBT;
InGaP-GaAs;
heterojunction bipolar transistors;
thermal behavior;
thermal dynamic behavi;
33.
Two-stage adaptive power amplifier MMIC for handset applications
机译:
手机应用的两级自适应功率放大器MMIC
作者:
Noh Y.S.
;
Yom I.B.
;
Park C.S.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
MMIC power amplifiers;
code division multiple access;
mobile handsets;
wideband amplifiers;
0.6 dB;
36 mA;
handset applications;
high-efficiency MMIC power amplifier;
intelligent two-stage adaptive W-CDMA power amplifier;
onchip adaptive bias circuit;
power level;
34.
A 100 W high-efficiency GaN HEMT amplifier for S-band wireless system
机译:
用于S频段无线系统的100 W高效GaN HEMT放大器
作者:
Maekawa A.
;
Nagahara M.
;
Yamamoto T.
;
Sano S.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
UHF power amplifiers;
aluminium compounds;
gallium compounds;
microwave power amplifiers;
power HEMT;
wide band gap semiconductors;
100 W;
2.6 to 2.9 GHz;
50 V;
58 percent;
AlGaN-GaN;
HEMT amplifier;
S-band wireless system;
power amplifier;
35.
A fully integrated SiGe low phase noise push-push VCO for 82 GHz
机译:
一个完全集成的SiGe低相位噪声推动VCO为82 GHz
作者:
Wanner R.
;
Schafer H.
;
Lachner R.
;
Olbrich G.R.
;
Russer P.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Ge-Si alloys;
MIM devices;
bipolar MIMIC;
carbon;
millimetre wave oscillators;
passive networks;
phase noise;
semiconductor materials;
varactors;
voltage-controlled oscillators;
1 MHz;
200 GHz;
275 GHz;
80.6 to 82.4 GHz;
MIM-capacitors;
SiGe:C;
bipolar technology;
integr;
36.
3D packaging for space application: imagination and reality
机译:
3D包装空间应用:想象力与现实
作者:
Monfraix P.
;
Drevon C.
;
Schaffauser C.
;
Paillard M.
;
Vendier O.
;
Cazaux J.-L.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
chip-on-board packaging;
low noise amplifiers;
modules;
satellite communication;
3D packaging approach;
ALCATEL;
chip on board approach;
digital modules;
hermetic encapsulation;
low noise amplifier section;
microwave modules;
quasihermetic packaging option;
space ap;
37.
Time-domain neural network characterization for dynamic behavioral models of power amplifiers
机译:
功率放大器动态行为模型的时域神经网络特征
作者:
Orengo G.
;
Colantonio P.
;
Serino A.
;
Giannini F.
;
Ghione G.
;
Pirola M.
;
Stegmayer G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Volterra series;
delays;
electronic engineering computing;
feedforward neural nets;
power amplifiers;
time-domain analysis;
Volterra series models;
behavioral model;
black-box model;
dynamic behavioral models;
multitone excitations;
nonlinear dynamic behavior;
power;
38.
A V band singly balanced diode mixer for space application
机译:
用于空间应用的V频段单平衡二极管混合器
作者:
Florian C.
;
Scappaviva F.
;
Feudale M.
;
Monaco V.A.
;
Filicori F.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
Schottky diode mixers;
frequency multipliers;
integrated circuit interconnections;
low noise amplifiers;
millimetre wave filters;
millimetre wave mixers;
millimetre wave oscillators;
network topology;
Schottky diodes;
V band single balanc;
39.
A novel technique for obtaining LO and RF (LSB) rejection in 25-40 GHz microwave up conversion mixers based on the concepts of distributed and double balanced mixing
机译:
基于分布式和双平衡混合概念,在25-40GHz微波上转换混合器中获得LO和RF(LSB)抑制的新技术
作者:
Mehdi M.
;
Rumelhard C.
;
Polleux J.L.
;
Lefebvre B.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium arsenide;
high electron mobility transistors;
microwave mixers;
-6 dB;
25 to 40 GHz;
GaAs;
LO frequencies rejection;
PHEMT;
RF frequencies rejection;
distributed mixing;
double balanced mixing;
microwave up conversion mixers;
40.
Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers
机译:
Si或SiC基板上AlGaN / GaN Hemts的噪声评估:在X波段低噪声放大器应用
作者:
De Jaeger J.C.
;
Delage S.L.
;
Dambrine G.
;
Di Forte Poisson M.A.
;
Hoel V.
;
Lepilliet S.
;
Grimbert B.
;
Morvan E.
;
Mancuso Y.
;
Gauthier G.
;
Lefrancois A.
;
Cordier Y.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
aluminium compounds;
gallium compounds;
high electron mobility transistors;
low noise amplifiers;
microwave amplifiers;
silicon compounds;
wide band gap semiconductors;
1.7 dB;
10 GHz;
12 GHz;
20 dB;
AlGaN-GaN;
HEMT;
LNA;
SiC;
X-band low noise ampl;
41.
Electro-thermal model extraction for MMIC power amplifiers
机译:
MMIC功率放大器的电热模型提取
作者:
Torregrosa-Penalva G.
;
Asensio-Lopez A.
;
Blanco-del-Campo A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
MMIC power amplifiers;
matrix algebra;
microwave transistors;
GaAs FET MMIC power amplifier;
MMIC power amplifiers;
complex structures;
electro-thermal model extraction;
hot spot temperature prediction;
multiple transistors;
position prediction;
42.
Optimised thermal and microwave packaging for wide-band gap transistors: diamond flip chip
机译:
用于宽带隙晶体管的优化热和微波包装:钻石和翻转芯片
作者:
Schaffauser C.
;
Vendier O.
;
Forestier S.
;
Michard F.
;
Geoffroy D.
;
Drevon C.
;
Villemazet J.F.
;
Cazaux J.L.
;
Delage S.
;
Roux J.L.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
diamond;
flip-chip devices;
microwave power transistors;
thermal management (packaging);
diamond;
diamond-based packaging;
die;
electrical measurement;
flip chip;
gallium arsenide components;
microwave packaging;
power transistors;
silicon components;
thermal cycling;
43.
InP DHBT-based IC technology for high-speed data communications
机译:
基于INP基于DHBT的IC技术,用于高速数据通信
作者:
Driad R.
;
Schneider K.
;
Makon R.E.
;
Lang M.
;
Nowotny U.
;
Aidam R.
;
Quay R.
;
Schlechtweg M.
;
Mikulla M.
;
Weimann G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
amplifiers;
data communication;
demultiplexing equipment;
gallium arsenide;
heterojunction bipolar transistors;
indium compounds;
millimetre wave integrated circuits;
molecular beam epitaxial growth;
multiplexing equipment;
submillimetre wave;
44.
A design of K-band predistortion linearizer using reflective Schottky diode for satellite TWTAs
机译:
用于卫星TWTA的反射肖特基二极管的K波段预失真线性化器的设计
作者:
Hee-Young Jeong
;
Sang-Keun Park
;
Nam-Sik Ryu
;
Yong-Chae Jeong
;
In-Bok Yom
;
Young Kim
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Schottky diodes;
linearisation techniques;
satellite communication;
travelling wave amplifiers;
K-band predistortion linearizer;
carrier complex power series;
inverse nonlinear distortion characteristics;
reflective Schottky diode;
resistor-terminated transmissi;
45.
Extraction of small signal equivalent circuit model parameters for statistical modeling of HBT using artificial neural
机译:
利用人工神经网络提取小信号等效电路模型参数的统计建模
作者:
Taher H.
;
Schreurs D.
;
Nauwelaers B.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
electronic engineering computing;
equivalent circuits;
heterojunction bipolar transistors;
neural nets;
semiconductor device models;
statistical analysis;
ANN;
HBT;
artificial neural network;
hetero junction bipolar transistor;
small signal equivalent circuit mode;
46.
Wideband characterization and simulation of advanced MOS devices for RF applications
机译:
用于RF应用的宽带特征和仿真
作者:
Raskin J.-P.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
MOSFET;
silicon-on-insulator;
3D numerical simulator;
International Roadmap of the Semiconductor Industry Association;
SILVACO;
advanced MOS devices;
multiple-gate SOI MOSFET;
47.
High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs
机译:
低频低噪声潜力降至65 nm技术节点MOSFET
作者:
Dambrine G.
;
Gloria D.
;
Scheer P.
;
Raynaud C.
;
Danneville F.
;
Lepilliet S.
;
Siligaris A.
;
Pailloncy G.
;
Martineau B.
;
Bouhana E.
;
Valentin R.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
MOSFET;
microwave field effect transistors;
0.8 dB;
12 GHz;
17.3 dB;
210 GHz;
MOSFET;
high gain properties;
microwave low noise;
state-of-the-art cut-off frequency;
48.
10-40 GHz design in SiGe-BiCMOS and Si-CMOS - linking technology and circuits to maximize performance
机译:
SiGe-BICMOS和SI-CMOS的10-40 GHz设计 - 连接技术和电路,以最大限度地提高性能
作者:
Veenstra H.
;
Hurkx G.A.M.
;
Heijden E.
;
Vaucher C.S.
;
Apostolidou M.
;
Jeurissen D.
;
Deixler P.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
BiCMOS integrated circuits;
CMOS integrated circuits;
Ge-Si alloys;
coupled circuits;
elemental semiconductors;
integrated circuit design;
microwave amplifiers;
millimetre wave amplifiers;
semiconductor materials;
voltage-controlled oscillators;
10 to 40 GHz;
BiCMO;
49.
A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity
机译:
GaAs单片防序列变容二极管对,用于电压控制电容,具有降低的RF非线性
作者:
Qing Han
;
Shimura A.
;
Inagaki K.
;
Ohira T.
;
Akaike M.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
capacitance;
gallium arsenide;
harmonic distortion;
varactors;
GaAs;
RF nonlinearity reduction;
monolithic antiseries varactor pair;
second-order harmonic distortions;
third-order harmonic distortions;
voltage-controlled capacitance;
50.
Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools
机译:
商业CAD工具中电子器件非传统非线性模型的实现
作者:
Resca D.
;
Cignani R.
;
Raffo A.
;
Santarelli A.
;
Vannini G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
circuit CAD;
equivalent circuits;
integrated circuit design;
microwave integrated circuits;
AWR Microwave Office model wizard;
Agilent ADS;
Verilog-A language;
commercial CAD tools;
defined component models;
electron devices;
equivalent circuit models;
integrated m;
51.
Comparison between equivalent-circuit and black-box non-linear models for microwave electron devices
机译:
微波电子器件等效电路与黑盒非线性型号的比较
作者:
Raffo A.
;
Lonac J.A.
;
Menghi S.
;
Cignani R.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
equivalent circuits;
microwave devices;
nonlinear network analysis;
semiconductor device models;
black-box nonlinear models;
equivalent-circuit;
identification procedure;
microwave electron devices;
model parameters extraction;
post-tune procedure;
52.
A novel linearizing technique using dual diode based linearizers for lightweight power amplifiers
机译:
一种新型线性化技术,其基于双二极管的轻量级功率放大器的线性化器
作者:
Kashiwa T.
;
Ohnishi Y.
;
Yamamoto K.
;
Ohshima H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
MOSFET;
diodes;
linearisation techniques;
power amplifiers;
quadrature amplitude modulation;
16-QAM;
LDMOS FET;
dual diode based linearizers;
gain expansion;
inductor;
lightweight power amplifiers;
linearizing technique;
modulated spectrum power;
positive phase;
53.
Novel SPICE macro modeling for an integrated Si Schottky barrier diode
机译:
集成Si Schottky屏障二极管的新型香料宏观模型
作者:
Janam Ku
;
Younhoon Min
;
Donghyun Lee
;
Iljong Song
;
Dongsig Shim
;
Namkyoung Lee
;
Seonghearn Lee
;
Yontaek Lee
;
Munsung Choi
;
Jonghyck Kim
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
CMOS integrated circuits;
S-parameters;
SPICE;
Schottky barriers;
Schottky diodes;
elemental semiconductors;
microwave diodes;
silicon;
CMOS process;
S-parameter sets;
SPICE diode model;
SPICE macromodeling;
Si;
capacitance model parameters;
direct extraction method;
d;
54.
Improved technique for reflection performances in broadband variable gain low noise amplifiers
机译:
宽带变量增益低噪声放大器反射性能的改进技术
作者:
Kawashima M.
;
Nakagawa T.
;
Yamaguchi Y.
;
Araki K.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
circuit feedback;
low noise amplifiers;
reflection;
wideband amplifiers;
3 dB;
6 dB;
750 MHz to 6 GHz;
8 dB;
broadband variable gain low noise amplifiers;
feedback circuit;
reflection;
55.
A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends
机译:
用于收发器前端的宽带平衡ALGAN / GAN HEMT MMIC低噪声放大器
作者:
Sanghyun Seo
;
Pavlidis D.
;
Jeong-Sun Moon
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
III-V semiconductors;
MMIC amplifiers;
aluminium compounds;
coplanar waveguides;
gallium compounds;
low noise amplifiers;
wide band gap semiconductors;
wideband amplifiers;
20 dB;
3 to 16 GHz;
4 dB;
AlGaN-GaN;
CPW couplers;
LNA;
coplanar waveg;
56.
A realistic large-signal microwave PHEMT transistors model for SPICE
机译:
一种逼真的大信号微波Phemt晶体管用于香料
作者:
Zamanillo J.M.
;
Ingelmo H.
;
Perez-Vega C.
;
Mediavilla A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
SPICE;
high electron mobility transistors;
microwave field effect transistors;
equivalent circuits;
harmonic-balance based simulators;
microwave PHEMT transistors;
time domain SPICE simulator;
57.
W-band low-loss wafer-scale package for RF MEMS
机译:
用于RF MEMS的W波段低损耗晶片级包装
作者:
Byung-Wook Min
;
Rebeiz G.M.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
coplanar waveguides;
dielectric materials;
micromechanical devices;
millimetre wave devices;
tape automated bonding;
wafer-scale integration;
0.6 to 0.8 dB;
75 to 110 GHz;
CPW lines;
RF MEMS devices;
Si;
W-band low-loss wafer-scale package;
coplanar waveguide;
dielec;
58.
Low noise, low interference automated bias networks for low frequency noise characterization set-up's
机译:
低噪声,低干扰自动偏置网络,用于低频噪声表征设置
作者:
Borgarino M.
;
Rossi M.
;
Fantini F.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium arsenide;
gallium compounds;
heterojunction bipolar transistors;
indium compounds;
microwave bipolar transistors;
semiconductor device noise;
automated bias networks;
electromechanical bias networks;
low frequency noise characterizat;
59.
Novel base doping profile for improved speed and power
机译:
新型基础掺杂型材,用于提高速度和功率
作者:
Rehder E.M.
;
Cismaru C.
;
Zampardi P.J.
;
Welser R.E.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium arsenide;
heterojunction bipolar transistors;
semiconductor doping;
GaAs;
base doping profile;
npn heterojunction bipolar transistor;
quasi-electric fields;
60.
A novel package approach for multichip modules based on anisotropic conductive adhesives
机译:
一种基于各向异性导电粘合剂的多芯片模块的新型包装方法
作者:
Heyen J.
;
Jacob A.F.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
adhesives;
integrated circuit interconnections;
integrated circuit packaging;
millimetre wave integrated circuits;
multichip modules;
MCM;
anisotropic conductive adhesives;
anisotropic conductive pastes;
electrical interconnection;
heat transfer;
mechanical interc;
61.
MEMS-IC integration for RF and millimeter wave applications
机译:
用于RF和毫米波应用的MEMS-IC集成
作者:
Dubuc D.
;
De Raedt W.
;
Garchon G.
;
Do M.N.
;
Fourn E.
;
Grenier K.
;
Plana R.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
active networks;
micromechanical devices;
microwave integrated circuits;
millimetre wave integrated circuits;
passive networks;
system-in-package;
MEMS-IC integration;
RF applications;
active circuits;
dielectric based technology;
heterogeneous microsystem;
microwa;
62.
A high-efficiency HBT-based class-E power amplifier for 2 GHz
机译:
基于高效的HBT系列功率放大器,用于2 GHz
作者:
Milosevic D.
;
van der Tang J.
;
vann Roermund A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
UHF power amplifiers;
heterojunction bipolar transistors;
minimum shift keying;
2 GHz;
50 ohm;
GMSK signal;
constant-envelope signals;
distributed-components concepts;
heterojunction bipolar transistor;
high-efficiency HBT-based class-E power amplifier;
load netwo;
63.
Thermal analysis of RF-MEMS switches for power handling front-end
机译:
电力处理前端RF-MEMS开关的热分析
作者:
Coccetti F.
;
Ducarouge B.
;
Scheid E.
;
Dubuc D.
;
Grenier K.
;
Plana R.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
microswitches;
radiofrequency integrated circuits;
10 GHz;
5 degC;
6.3 W;
75.5 degC;
IR imaging;
RF-MEMS switches;
RFIC power handling front-end;
capacitive switch;
electromagnetic induced heat;
infrared imaging;
thermal analysis;
64.
A low-noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations
机译:
用于无线基站的增强模式GaAs Phemt技术中的低噪声,高线性平衡放大器
作者:
Chong T.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
UHF amplifiers;
gallium arsenide;
high electron mobility transistors;
low noise amplifiers;
radio receivers;
0.9 dB;
2 GHz;
31 dB;
5.0 V;
Agilent Technologies;
GaAs;
GaAs pHEMT technology;
LNA;
MMIC;
balanced amplifier;
enhancement-mode pseudomorph;
65.
A broad-band active frequency doubler operating up to 120 GHz
机译:
宽带主动频率倍增器,工作高达120 GHz
作者:
Puyal V.
;
Konczykowska A.
;
Nouet P.
;
Bernard S.
;
Riet M.
;
Jorge F.
;
Godin J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
MIMIC;
frequency multipliers;
heterojunction bipolar transistors;
indium compounds;
millimetre wave bipolar transistors;
120 GHz;
50 GHz;
DHBT process;
InP;
broad-band active frequency doubler;
monolithic integrated active frequency doubler;
66.
A low cost SMT integrated frequency doubler and power amplifier for 30 GHz DBS uplink applications
机译:
用于30 GHz DBS上行链路应用的低成本SMT集成频率倍增器和功率放大器
作者:
Bhatnagar M.
;
Morkner H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
MMIC power amplifiers;
direct broadcasting by satellite;
frequency multipliers;
millimetre wave power amplifiers;
satellite links;
surface mount technology;
15 GHz;
30 GHz;
DBS uplink;
PHEMT technology;
SMT integrated frequency doubler;
dir;
67.
A measurement system for FET derivative extraction under dynamic operating regime
机译:
动态经营制度下FET衍生物提取的测量系统
作者:
Pena R.
;
Gomez C.
;
Garcia J.A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Schottky gate field effect transistors;
semiconductor device models;
FET derivative extraction;
MESFET;
dynamic operating regime;
pulsed signals;
68.
Advanced manufacturing techniques for next generation power FET Technology
机译:
下一代电力FET技术的先进制造技术
作者:
Clausen M.C.
;
McMonagle J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
power HEMT;
semiconductor device manufacture;
manufacturing techniques;
power FET Technology;
power pHEMT device;
69.
Digital SiGe-chips for data transmission up to 85 Gbit/s
机译:
数字SiGe-Chips,用于数据传输高达85 Gbit / s
作者:
Wohlgemuth O.
;
Muller W.
;
Paschke P.
;
Link T.
;
Lederer R.
;
Kolb B.
;
Dotzauer H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Ge-Si alloys;
data communication;
demultiplexing equipment;
integrated circuit design;
millimetre wave integrated circuits;
multiplexing equipment;
random sequences;
semiconductor materials;
200 GHz;
275 GHz;
85.4 Gbit/s;
SiGe;
demultiplexer IC;
electrical data trans;
70.
A ultra low-power highly-linear HITD based down-converter for K-band applications
机译:
基于超低功耗高功率高线性HITD用于K波段应用的下变频器
作者:
Magrini I.
;
Camprini M.
;
Cidronali A.
;
Collodi G.
;
Manes G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
MMIC mixers;
indium compounds;
microwave diodes;
semiconductor device models;
19 to 26 GHz;
6 to 10 dB;
InP;
K-band applications;
coplanar Lange coupler;
down-converter;
heterojunction interband tunnel diodes;
single balanced mixer;
ultra low-po;
71.
Simplified validation of non-linear models for micro- and millimeter-wave electron devices
机译:
微型和毫米波电子器件的非线性模型简化验证
作者:
Raffo A.
;
Santarelli A.
;
Traverso P.A.
;
Vannini G.
;
Filicori F.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
MIMIC;
MMIC;
integrated circuit design;
integrated circuit modelling;
micro-wave electron devices;
millimeter-wave electron devices;
nonlinear MMIC design;
nonlinear modelling;
72.
A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology
机译:
使用50 nm变质HEMT技术,150至220 GHz平衡倍线MMIC
作者:
Schworer C.
;
Roca Y.C.
;
Leuther A.
;
Tessmann A.
;
Seelmann-Eggebert M.
;
Massler H.
;
Schlechtweg M.
;
Weimann G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
MMIC mixers;
baluns;
field effect transistors;
frequency multipliers;
150 to 220 GHz;
50 nm;
FET mixer;
G-band;
Marchand balun;
coplanar millimeter wave doubler MMIC;
metamorphic HEMT technology;
73.
DC-65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches
机译:
用于可靠的RF MEMS开关的纳米晶金刚石泄漏薄膜DC-65 GHz表征
作者:
Joolien Chee
;
Karru R.
;
Fisher T.S.
;
Peroulis D.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
diamond;
dielectric thin films;
electrical conductivity;
grain size;
microswitches;
nanostructured materials;
nanotechnology;
plasma CVD;
0 to 65 GHz;
C;
PECVD;
RF MEMS switches;
capacitive RF MEMS switches;
charge-induced stiction;
grain size;
nanocrystalline diamond;
74.
Carbon nanotubes for RF and microwaves
机译:
用于RF和微波的碳纳米管
作者:
Burke P.J.
;
Yu Z.
;
Rutherglen C.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
carbon nanotubes;
integrated circuit interconnections;
microwave integrated circuits;
RF devices;
carbon nanotubes;
integrated circuits;
microwave devices;
ultrahigh speed interconnects;
75.
A 3D wideband package solution using MCM-D BCB technology for tile TR module
机译:
一种使用MCM-D BCB技术的3D宽带包解决方案,用于瓷砖TR模块
作者:
Barbier T.
;
Mazel F.
;
Reig B.
;
Monfraix P.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
UHF antennas;
microwave antennas;
multichip modules;
2 to 20 GHz;
3D wideband package solution;
BCB substrates;
airborne environmental constraints;
module demonstrator;
nonhermetic architecture;
passives integration;
test vehicles;
vertical interconnections;
76.
A GaAs distributed amplifier with an output voltage of 8.5 V/sub PP/ for 40 Gb/s modulators
机译:
GAAS分布式放大器,输出电压为8.5 V / SUB / SUP / SO 40 GB / S调制器
作者:
Hafele M.
;
Trasser A.
;
Beilenhoff K.
;
Schumacher H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
distributed amplifiers;
frequency response;
gallium arsenide;
modulators;
power HEMT;
preamplifiers;
19.5 dB;
20 GHz;
37 GHz;
38 GHz;
40 Gbit/s;
8.5 V;
9.8 dB;
GaAs;
cascaded amplifiers;
cascode cells;
distributed amplifier;
flat frequency response;
m;
77.
Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications
机译:
用于横向滤波器应用的短栅极长度异质结构电荷耦合装置的设计和制造
作者:
Hiang Teik Tan
;
Hunter I.C.
;
Snowden C.M.
;
Ranson R.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
MMIC;
Poisson equation;
Schrodinger equation;
aluminium compounds;
charge-coupled devices;
gallium arsenide;
indium compounds;
microwave filters;
semiconductor device models;
transversal filters;
AlGaAs-InGaAs;
GaAs heterostructure MMIC technol;
78.
Modeling, analysis and classification of a PA based on identified Volterra kernels
机译:
基于识别的Volterra内核的PA的建模,分析与分类
作者:
Silveira D.
;
Gadringer M.
;
Arthaber H.
;
Mayer M.
;
Magerl G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
linearisation techniques;
microwave power amplifiers;
semiconductor device models;
semiconductor device noise;
stochastic processes;
white noise;
Volterra kernels;
compression operation modes;
identification process;
inband quasiwhite noise real-valued signal;
lin;
79.
High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides
机译:
高增益110-GHz低噪声放大器MMIC使用120nm变质垫和共面波导
作者:
Bessemoulin A.
;
Fellon P.
;
Gruenenpuett J.
;
Massler H.
;
Reinert W.
;
Kohn E.
;
Tessmann A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
MMIC amplifiers;
coplanar waveguides;
low noise amplifiers;
millimetre wave amplifiers;
100 to 115 GHz;
4 dB;
4.5 dB;
8 dB;
LNA;
coplanar waveguides;
low noise amplifier MMIC;
metamorphic HEMT;
single-stage amplifier;
80.
Thermal design of power GaN FETs in microstrip and coplanar MMICs
机译:
微带和共面摩西电力甘FET的热设计
作者:
Angelini A.
;
Furno M.
;
Cappelluti F.
;
Bonani F.
;
Pirola M.
;
Ghione G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
MMIC;
gallium compounds;
microstrip circuits;
microwave field effect transistors;
power field effect transistors;
semiconductor device models;
wide band gap semiconductors;
GaN;
coplanar MMIC;
integrated power devices;
low-noise amplifiers;
mic;
81.
Highly linear 20 GHz-micromixer in SiGe bipolar technology
机译:
SiGe双极技术中高度线性的20 GHz微混合器
作者:
Do M.N.
;
Dubuc D.
;
Coustou A.
;
Tournier E.
;
Ancey P.
;
Plana R.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
Ge-Si alloys;
MMIC mixers;
network topology;
semiconductor device models;
semiconductor materials;
20 GHz;
25 mA;
Gilbert micromixer topology;
SiGe;
active mixer;
bipolar technology;
micromixer;
82.
Large-signal behavioral model of a packaged RF amplifier based on QPSK-like multisine measurements
机译:
基于QPSK样多洋测量的封装RF放大器的大信号行为模型
作者:
Myslinski M.
;
Schreurs D.
;
Remley K.A.
;
McKinley M.D.
;
Nauwelaers B.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
quadrature phase shift keying;
radiofrequency amplifiers;
PDF;
QPSK-like multisine measurements;
digital signal modulation;
large-signal time-domain behavioral model;
multisine excitation;
off-the-shelf RF amplifier;
packaged RF amplifier;
probability density fun;
83.
Compact and broadband microstrip power amplifier MMIC with 400-mW output power using 0.15-/spl mu/m GaAs PHEMTs
机译:
紧凑型和宽带微带功率放大器MMIC,具有400 MW输出功率,使用0.15- / SPL MU / M GaAs Phemts
作者:
Bessemoulin A.
;
Mahon S.
;
Dadello A.
;
McCulloch G.
;
Harvey J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
III-V semiconductors;
MMIC power amplifiers;
gallium arsenide;
microstrip circuits;
millimetre wave power amplifiers;
power HEMT;
wideband amplifiers;
35 to 45 GHz;
400 mW;
5 V;
500 mA;
GaAs;
MMIC;
broadband microstrip power amplifier;
compact;
84.
A simple non-quasi-static non-linear model of electron devices
机译:
电子器件简单的非准静态非线性模型
作者:
Santarelli A.
;
Di Giacomo V.
;
Raffo A.
;
Traverso P.A.
;
Vannini G.
;
Filicori F.
;
Monaco M.A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
gallium arsenide;
microwave devices;
millimetre wave devices;
nonlinear network synthesis;
GaAs;
PHEMT;
electron devices;
microwave waves;
millimetre waves;
nonquasi-static nonlinear model;
voltage-controlled voltage sources;
85.
A millimeter-wave ultra-compact broadband diode mixer using modified Marchand balun
机译:
一种毫米波超紧凑型宽带二极管搅拌机,使用改进的Marchand Baluan
作者:
Pei-Si Wu
;
Chin-Shen Lin
;
Tian-Wei Huang
;
Huei Wang
;
Yu-Chi Wang
;
Chan-Shin Wu
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
MMIC mixers;
millimetre wave mixers;
46 to 78 GHz;
MMIC mixers;
Schottky diodes;
millimeter-wave ultracompact broadband diode mixer;
modified Marchand balun;
pHEMT technology;
86.
Ultra high IP3 passive GaAs FET mixers
机译:
超高IP3无源GaAs FET混合器
作者:
Wentzel A.
;
Pienkowski D.
;
Boeck G.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
field effect transistors;
gallium arsenide;
mixers (circuits);
GaAs;
balancing principles;
input third-order intercept points;
passive FET mixers;
port isolation;
87.
Verification of a frequency dispersion model in the performance of a GaAs pHEMT travelling-wave MMIC
机译:
GaAs Phemt旅行波的频率分散模型的验证
作者:
Kallfass I.
;
Zhang C.
;
Grunenputt J.
;
Teyssandier C.
;
Schumacher H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
III-V semiconductors;
MMIC;
gallium arsenide;
travelling wave tubes;
GaAs;
frequency dispersion model;
multiple time constant IV characteristics;
pHEMT travelling-wave MMIC design;
power-added efficiency;
88.
Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT
机译:
使用InGaP / GaAs HBT的单芯片双带WLAN功率放大器
作者:
Chien-Cheng Lin
;
Yu-Cheng Hsu
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
MMIC power amplifiers;
gallium arsenide;
gallium compounds;
heterojunction bipolar transistors;
indium compounds;
wireless LAN;
2.2 to 5.5 GHz;
2.4 GHz;
3.5 V;
5.2 GHz;
HBT;
IEEE 802.11a standards;
IEEE 802.11b standards;
IEEE 802.11g standards;
I;
89.
S and C band over 100 W GaN HEMT 1-chip high power amplifiers with cell division configuration
机译:
S和C频段超过100 W GaN HEMT 1芯片高功率放大器,具有电池分割配置
作者:
Yamanaka K.
;
Iyomasa K.
;
Ohtsuka H.
;
Nakayama M.
;
Tsuyama Y.
;
Kunii T.
;
Kamo Y.
;
Takagi T.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
UHF field effect transistors;
UHF power amplifiers;
gallium compounds;
high electron mobility transistors;
microwave field effect transistors;
microwave power amplifiers;
wide band gap semiconductors;
120 W;
140 W;
C band;
GaN;
HEMT 1-chip high;
90.
Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs
机译:
甘FET电流减小和脉冲I-V曲线的缓冲捕获效应分析
作者:
Takayanagi H.
;
Nakano H.
;
Horio K.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
Schottky gate field effect transistors;
buffer layers;
deep levels;
electrical conductivity;
electron traps;
gallium compounds;
impurity states;
insulating thin films;
wide band gap semiconductors;
GaN;
GaN MESFET;
acceptor density;
buffer layer;
91.
A cost-effective 10 Watt X-band high power amplifier and 1 Watt driver amplifier chip-set
机译:
一种经济高效的10瓦X波段大功率放大器和1瓦驱动放大器芯片组
作者:
de Hek A.P.
;
van der Bent G.
;
van Wanum M.
;
van Vliet F.E.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
microwave power amplifiers;
power HEMT;
1 W;
10 W;
8.5 to 11.5 GHz;
X-band high power amplifier;
driver amplifier chip-set;
power pHEMT process;
92.
Low frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate
机译:
在SiC基板上生长的AlGaN / GaN的低频和线性高频噪声性能
作者:
Tartarin J.-G.
;
Soubercaze-Pun G.
;
Bary L.
;
Chambon C.
;
Gribaldo S.
;
Llopis O.
;
Escotte L.
;
Plana R.
;
Delage S.
;
Gaquiere C.
;
Graffeuil J.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
III-V semiconductors;
aluminium compounds;
gallium compounds;
high electron mobility transistors;
low noise amplifiers;
semiconductor device noise;
transceivers;
voltage-controlled oscillators;
wide band gap semiconductors;
10 GHz;
Al/sub 2/O/sub 3/;
AlGaN-GaN;
AlGa;
93.
Accurate temperature dependent noise models of microwave transistors based on neural networks
机译:
基于神经网络的微波晶体管精确依赖噪声模型
作者:
Marinkovic Z.
;
Markovic V.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
circuit noise;
electronic engineering computing;
equivalent circuits;
microwave transistors;
device noise parameter modelling;
microwave transistors;
neural networks;
small-signal equivalent circuit;
temperature dependent noise models;
94.
A MEMS capacitor with improved RF power handling capability
机译:
具有改进的RF功率处理能力的MEMS电容器
作者:
Girbau D.
;
Otegi N.
;
Pradell L.
;
Lazaro A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
capacitors;
micromechanical devices;
tuning;
MEMS capacitor;
RF power conditions;
RF power handling capability;
RF signal power;
electrode;
self-actuation effect;
standard surface-micromachining MEMS technology;
95.
Impact of RFIC integration of system and subsystem blocks on MCM solutions
机译:
RFIC集成对系统的影响和子系统块对MCM解决方案的影响
作者:
Reedy R.E.
;
Comparini M.C.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
CMOS integrated circuits;
elemental semiconductors;
mobile handsets;
multichip modules;
radiofrequency integrated circuits;
silicon;
MCM solutions;
RFIC integration;
Si;
UltraCMOS/sup /spl reg// technology;
digital subsystems;
integrated circuits;
mobile phones;
mult;
96.
Compact W-band SPQT MMIC switch using traveling wave concept
机译:
紧凑型W波段SPQT MMIC开关使用旅行波概念
作者:
Shih-Fong Chao
;
Zuo-Min Tsai
;
Kun-You Lin
;
Huei Wang
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
III-V semiconductors;
MIMIC;
MMIC;
gallium arsenide;
microwave switches;
3.9 to 5.5 dB;
70 to 102 GHz;
GaAs;
HEMT;
W-band SPQT MMIC switch;
single-pole-quadruple-throw switch;
traveling wave concept;
97.
Generation of third and higher-order intermodulation products in MEMS capacitors, and their effects
机译:
在MEMS电容器中产生第三和高阶互调产品及其效果
作者:
Girbau D.
;
Otegi N.
;
Pradell L.
;
Lazaro A.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
capacitors;
intermodulation distortion;
micromechanical devices;
quadrature phase shift keying;
QPSK;
RF MEMS capacitors;
RF tones;
digitally-modulated communication signals;
higher-order intermodulation products;
intermodulation distortion;
numerical nonlinear mo;
98.
A high purity 60 GHz-band single chip /spl times/8 multiplier with low phase noise
机译:
高纯度60 GHz带单芯片/ SPL时间/ 8乘法器,具有低相位噪声
作者:
Karnfelt C.
;
Kozhuharov R.
;
Zirath H.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
HEMT integrated circuits;
MIMIC;
multiplying circuits;
phase noise;
450 mW;
52 to 62 GHz;
MMIC;
doubler stage;
high pass filter;
inter-stage amplifier;
low phase noise;
pHEMT process;
single chip /spl times/8 multiplier;
99.
A 23-24 GHz low power frequency synthesizer in 0.25 /spl mu/m SiGe
机译:
23-24 GHz低功耗频率合成器,0.25 / SPL MU / M SiGe
作者:
Mazouffre O.
;
Lapuyade H.
;
Begueret J.-B.
;
Cathelin A.
;
Belot D.
;
Hellmuth P.
;
Deval Y.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
frequency synthesizers;
millimetre wave integrated circuits;
phase locked loops;
phase noise;
prescalers;
semiconductor materials;
100 kHz;
170 mW;
23.7 to 24.9 GHz;
PLL power dissipation;
STMicroelectronics;
SiGe;
integrated;
100.
System-level simulation of a noisy phase-locked loop
机译:
噪声锁相环的系统级仿真
作者:
Herzel F.
;
Piz M.
会议名称:
《European Gallium Arsenide and Other Semiconductor Application Symposium》
|
2005年
关键词:
OFDM modulation;
phase locked loops;
phase noise;
stochastic processes;
time-domain analysis;
voltage-controlled oscillators;
60 GHz;
OFDM system;
Ornstein-Uhlenbeck process;
PLL;
VCO;
Wiener process;
common phase error;
frequency-domain model;
noisy phase-locked loop;
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