A 17 to 26 GHz micromixer in SiGe BiCMOS technology

摘要

We report, for the first time, our experimental results of a high frequency micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved: typically 0 dBm input-referred P/sub -1dB/ and 8 dBm IIP3. The conversion gain and double side band noise figure at 23 GHz RF input is -3.6 dB and 18.2 dB, respectively. The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer is also implanted on the same wafer. The experimental results are compared for the two active mixers.