Design of 5 GHz low noise amplifier with HBM SiGe 0 .3μm BiCMOS process

摘要

A fully integrated low noise amplifier (LNA) for WLAN 802.11ac is presented in this article. A cascode topology combining BJT and MOS transistor is used for better performance .An inductive source degeneration is chosen to get 50 Ohm impedance matching at the input .The noise contribution of common gate transistor is analyzed for the first time .The designed LNA is verified with IBM sili-con-germanium ( SiGe ) 0 .13μm BiCMOS process .The measured results show that the designed LNA has the gain of 13dB and NF of 2.8dB at the center frequency of 5.5GHz.The input reflection S11 and output reflection S22 are equal to -19dB and -11dB respectively.The P-1dB and IIP3 are -8.9dBm and 6.6dBm for the linearity performance respectively .The power consumption is only 1.3mW under the 1.2V supply.LNA achieves high gain, low noise, and high linearity per-formance , allowing it to be used for the WLAN 802 .11 ac applications .