Wideband characterization and simulation of advanced MOS devices for RF applications

摘要

Multiple-gate SOI MOSFETs are potential candidates for achieving the performance expectations of the International Roadmap of the Semiconductor Industry Association. In this paper, experimental and simulation analyses have been carried out to compare the analog/RF performance of single and multi-gates SOI MOSFETs using the commercially available 3-D numerical simulator, SILVACO. Their characteristics were analyzed in DC and AC regimes from subthreshold region to strong inversion and saturation region. In both regimes, the advantages and limitations of the multiple-gate devices over the single gate structure with channel length scaling well below 100 nm are discussed for high frequency analog applications.