Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT

摘要

A single-chip dual-band power amplifier monolithic microwave integrated circuit (MMIC) operating at 3.5 V single supply has been developed for both WLAN 2.4 GHz and 5.2 GHz with IEEE 802.11b/g/a standards applications. The MMIC utilizes the process of WINs Corp. with an InGaP/GaAs HBT process. The dual-band power amplifier constructed based on the design of adaptive RF bias choke circuits and proper output matching networks. The proposed WLAN PA chip provides low current consumption and high power added efficiency. The WLAN-PA is implemented as a two-stage MMIC with active bias and input pre-matching and inter-stage matching networks integrated. In addition, the PA is a broadband power amplifier with above 20 dB flat gain between the frequency bands of 2.2 GHz to 5.5 GHz.