METHOD OF MANUFACTURING InGaP/GaAs-HBT AND EVALUATING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain an evaluating method for obtaining an optimum condition by obtaining the distributions and the variations of the minority carrier lifetime, the majority carrier concentration and the thickness of a base layer between wafers and in the wafer of a InGaP/GaAs bipolar transistor HBT, and to obtain a manufacturing method thereof. ;SOLUTION: According to MOCVD method, a collector layer, AlGaAs layer, p-type base layer of 300 nm to 1 μm thickness, an n-InGaP layer and an emitter layer are laminated by the epitaxial growth on a GaAs substrate, the emitter layer is removed after cooling, the lifetime (τ)or minority carriers of the base layer is measured through the n-InGaP layer or directly after removing this layer, and the n-InGaP layer is removed to measure the carrier concentration (p) of the base layer and its thickness (d). The variations in lifetime τ, thickness (d) and carrier concentration (p) of the base layer are obtained for each wafer and in the wafer plane, and such conditions as the raw material gas feed distribution and temperature distribution are changed, so as to reduce the variations, thereby searching for conditions for reducing the variations.;COPYRIGHT: (C)2001,JPO