A FULLY INTEGRATED CONCURRENT DUAL-BAND LOW-NOISE AMPLIFIER USING INGAP/GAAS HBT TECHNOLOGY

摘要

A fully integrated concurrent dual-band low noise amplifier using InGaP/GaAs HBT technology is demonstrated for the first time. A new methodology is proposed so as to achieve simultaneous narrow-band gain and impedance matching at multiple frequencies. The experimental results showed that input return losses of -16.2 and -12.1 dB, voltage gains of 16.8 and 20.1 dB, and noise figures of 2.72 and 2.88 dB were obtained at 2 and 4.6 GHz, respectively with power consumption of 12 mW.