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Journal of Semiconductors

Journal of Semiconductors

北大核心

CSCD

CSTPCD

《半导体学报（英文版）》是由中国电子学会和中国科学院半导体研究所主办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家新闻出版署的期刊评比中多次获奖。
  • 发文量：9354
  • 被引量：11418
  • H指数：23
  • 开始收录时间：1981(3)
  • CNKI综合因子：0.298
  • 维普期刊影响因子： 0.23
  • 万方期刊影响因子：0.25
  • 创刊时间：1980
  • 国内刊号/CN：11-5781/TN
    国际刊号/ISSN：1674-4926
  • 发行周期：月刊
    邮发代号：2-184
  • 主管单位：中国科学院
    主办单位：中国电子学会;中国科学院半导体研究所
Journal of Semiconductors-联系信息
  • 主编：李树深
  • 电话：010-82304277
  • 邮箱：jos@semi.ac.cn
  • 地址：北京912信箱
  • 邮编：100083
Journal of Semiconductors-获奖情况
  • • 卓越计划期刊
  • • 90年获中科院优秀期刊二等奖
  • • 92年获国家科委、中共中央宣传部和国家新闻出版署全国优秀期刊评比三等奖
  • • 97年国家科委、中共中央中宣传部和国家新出版署三等奖
  • • 中国期刊方阵“双效”期刊
  • 收录汇总
  • 刊内文献检索
  • 投稿信息

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Journal of Semiconductors >2025年第6期
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  • 摘要：High-performance perovskite photodetectors with self-driven characteristic usually need electron/hole transport layers to extract carriers. However, these devices with transport layer structure are prone to result in a poor perovskite/transport layer interface, which restricts the performance and stability of the device. To solve this problem, this work reports a novel device structure in which perovskite nanowires are in-situ prepared on PbI_(2), which serves as both a reaction raw material and efficient carrier extraction layer. By optimizing the thickness of PbI_(2), nanowire growth time, and ion exchange time, a selfdriven photodetector with an ITO/PbI_(2)/CsPbBr_(3)/carbon structure is constructed. The optimized device achieves excellent performance with the responsivity of 0.33 A/W, the detectivity of as high as 3.52 × 10^(13) Jones. Furthermore, the device can detect the light with its optical power lowered to 0.1 nW/cm^(2). This research provides a new method for preparing perovskite nano/micro devices with simple structure but excellent performance.
  • 摘要：Solar energy, as a renewable resource, is an effective solution to the current global energy shortage problem. To actively respond to the call for "carbon peak" and "carbon neutrality", solar cell industry has experienced unprecedented development. The full utilization of solar energy resources remains an urgent issue to be addressed.
  • 摘要：Improving the quality of life for Earth's growing population is a complex task that requires the development of new technologies and materials. Perhaps the biggest challenge is access to clean and renewable energy sources that can drive a sustainable future. Photovoltaics, today mainly represented by silicon-based solar cells, convert solar energy into electricity and is already an important component in the renewable energy portfolio.
  • 摘要：Due to advantages of high power-conversion efficiency(PCE), large power-to-weight ratio(PWR), low cost and solution processibility, flexible perovskite solar cells(f-PSCs) have attracted extensive attention in recent years. The PCE of f-PSCs has developed rapidly to over 25%, showing great application prospects in aerospace and wearable electronic devices. This review systematically sorts device structures and compositions of f-PSCs, summarizes various methods to improve its efficiency and stability recent years. In addition, the applications and potentials of f-PSCs in space vehicle and aircraft was discussed. At last, we prospect the key scientific and technological issues that need to be addressed for f-PSCs at current stage.
  • 摘要：Metal halide perovskites, as a novel class of semiconductor optoelectronic materials, combine the excellent optoelectronic properties of inorganic semiconductors with the advantages of low-cost, printable fabrication typical of organic semiconductors, making them a cutting-edge research focus in the field of semiconductor optoelectronic devices.
  • 摘要：Perovskite solar cells(PSCs) have become a hot topic in the field of renewable energy due to their excellent power conversion efficiency and potential for low-cost manufacturing. The hole transport layer(HTL), as a key component of PSCs,plays a crucial role in the cell's overall performance. Magnetron sputtering NiO_(x) has attracted widespread attention due to its high carrier mobility, excellent stability, and suitability for large-scale production. Herein, an insightful summary of the recent progress of magnetron sputtering NiO_(x) as the HTL of PSCs is presented to promote its further development. This review summarized the basic properties of magnetron sputtering NiO_(x) thin film, the key parameters affecting the optoelectronic properties of NiO_(x) thin films during the magnetron-sputtering process, and the performance of the corresponding PSCs. Special attention was paid to the interfacial issues between NiO_(x) and perovskites, and the modification strategies were systematically summarized. Finally, the challenges of sputtering NiO_(x) technology and the possible development opportunities were concluded and discussed.
  • 摘要：Halide perovskites have attracted great interest as active layers in optoelectronic devices. Among perovskites with diverse compositions, α-FAPbI_(3) is of utmost importance with great optoelectronic properties and a decent bandgap of 1.48 eV.However, the α-phase suffers an irreversible transition to the photo-inactive δ-phase, whereas the δ-phase is usually regarded as useless phase with poor optoelectronic properties. Therefore, it is commonly accepted that the thermodynamic stable δ-FAPbI_(3) greatly limits the application of FAPbI_(3). Every coin has two sides, although the δ-phase is difficult to apply as photoelectrical active layers, it is possible to combine δ-FAPbI_(3) with α-FAPbI_(3) to realize functional applications. Firstly, this review analyzes the cause of the contrasting properties between α-and δ-FAPbI_(3), where the stronger electron-phonon coupling in 1D hexagonal δ-FAPbI_(3) restricts its internal carrier and phonon transport. Secondly, the factors affecting the phase transitions and strategies to control phase transition between α-and δ-FAPbI_(3) are presented. Finally, some functional applications of δ-FAPbI_(3) in combination with α-FAPbI_(3) are given according to previous reports. By and large, we hope to introduce δ-FAPbI_(3) from another perspective and give some insights into its unique properties, hopefully providing new strategies for the subsequent advances to FAPbI_(3).
  • 摘要：Integrated perovskite-organic solar cells(IPOSCs) offer a promising hybrid approach that combines the advantages of perovskite and organic solar cells, enabling efficient photon absorption across a broad spectrum with a simplified architecture. However, challenges such as limited charge mobility in organic bulk heterojunction(BHJ) layers, and energy-level mismatch at the perovskite/BHJ interface still sustain. Recent advancements in non-fullerene acceptors(NFAs), interfacial engineering, and emerging materials have improved charge transfer/transport, and overall power conversion efficiency(PCE) of IPOSCs.This review explores key developments in IPOSCs, focusing on low-bandgap materials for near-infrared absorption, energy alignment optimization, and strategies to enhance photocurrent density and device performance. Future innovations in material selection and device architecture will be crucial for further improving the efficiency of IPOSCs, bringing them closer to practical application in next-generation photovoltaic technologies.
  • 摘要：Owing to their low toxicity and remarkable stability, perovskites based on antimony and bismuth have garnered significant interest in recent years. However, A_(3)B_(2)X_(9) perovskite materials derived from antimony and bismuth face several challenges, including excessively wide band gaps, elevated defect densities, and suboptimal film quality, all of which hinder advancements in device efficiency. While extensive studies have been undertaken to investigate the effects of modulating the A-site and X-site elements in lead-free A_(3)B_(2)X_(9) perovskites, there remains a notable scarcity of reports addressing the impact of modifications to the B-site element. In this study, we investigated the alloying of antimony and bismuth within the 2D Cs_(3)B_(2)I_(6)Br_(3) perovskite. By systematically varying the ratios of two elements, we found that the incorporation of both antimony and bismuth at the B-site significantly enhances the quality of the perovskite films. Our findings indicate that a 1 : 1 ratio of antimony to bismuth produces the densest films, the highest photoluminescence intensity, and superior photovoltaic performance. Ultimately,the devices fabricated using this optimal ratio achieved an open-circuit voltage(VOC) of 1.01 V and a power conversion efficiency(PCE) of 0.645%.
  • 摘要：In recent years, the research advancements have high-lighted the critical role of the A-site cation in determining the optoelectronic and physicochemical properties of organicinorganic lead halide perovskites. Mixed-cation perovskites(MCPs) have been extensively used as absorber thin films in perovskite solar cells(PSCs), achieving high power conversion efficiencies(PCE) over 26%^([1, 2]).
  • 摘要：Interfacial defects and environmental instability at perovskite surfaces pose significant challenges for inverted perovskite solar cells(PSCs). Surface post-treatment strategies have emerged as a viable approach to improve film quality and passivate defects. Although organic molecules can passivate both surfaces and grain boundaries via hydrogen or covalent bonding,their limited adsorption specificity often results in incomplete defect neutralization. In this work, we introduce a bilayer passivation approach employing phenethylammonium iodide(PEAI) and n-octylammonium iodide(OAI) to concurrently mitigate nonradiative recombination and improve stability. PEAI passivates undercoordinated Pb^(2+) at grain boundaries and surfaces, effectively eliminating deep-level traps and suppressing non-radiative losses. Meanwhile, OAI forms a hydrophobic barrier on the perovskite surface through its long alkyl chains, inhibiting moisture penetration without compromising interfacial charge transport. As a result, the perovskite film exhibits significantly enhanced optoelectronic performance and environmental stability,achieving a champion power conversion efficiency(PCE) of 24.48%.
  • 摘要：Although perovskite solar cells(PSCs) demonstrate outstanding power conversion efficiency(PCE), their practical applications are still limited by stability issues caused by various problems such as poor crystal quality triggered structural instability. Herein, to address the structural instability of perovskites, we introduced a polymer additive, poly-L-lysine hydrobromide(PLL), into the perovskite precursor to promote perovskite crystal growth, thereby constructing a stable crystal structure. The results show that the introduction of PLL modulates the colloidal aggregation state in the precursor solution, provides longer time for growth of perovskite and successfully realizes the formation of large-sized perovskite films with high crystallinity. More importantly, owing to its hydrophobic long-chain structure and the widespread distribution of C=O and NH on the chain, PLL firmly locks the perovskite crystals, enhancing their structural stability while blocking the intrusion of external factors such as water molecules, significantly enhances the overall stability of the device. The results show that the PLL-based PSC has negligible hysteresis and its PCE is improved from 22.20% to 23.66%. while the PLL-modified perovskite films and devices demonstrate excellent thermal and environmental stability. These findings highlight PLL as a promising additive for optimizing perovskite crystallization, offering guidance for fabricating efficient and stable photovoltaic devices.
  • 摘要：All-perovskite tandem solar cells(ATSCs) have the potential to surpass the Shockley-Queisser efficiency limit of conventional single-junction devices. However, the performance and stability of mixed tin–lead(Sn–Pb) perovskite solar cells(PSCs), which are crucial components of ATSCs, are much lower than those of lead-based perovskites. The primary challenges include the high crystallization rate of perovskite materials and the susceptibility of Sn^(2+) oxidation, which leads to rough morphology and unfavorable p-type self-doping. To address these issues, we introduced ethylhydrazine oxalate(EDO) at the perovskite interface, which effectively inhibits the oxidation of Sn^(2+) and simultaneously enhances the crystallinity of the perovskite. Consequently, the EDO-modified mixed tin-lead PSCs reached a power conversion efficiency(PCE) of 21.96% with high reproducibility. We further achieved a 27.58% efficient ATSCs by using EDO as interfacial passivator in the Sn-Pb PSCs.
  • 摘要：As a type of charge-balanced power device,the performance of super-junction MOSFETs(SJ-MOS)is significantly influ-enced by fluctuations in the fabrication process.To overcome the relatively narrow process window of conventional SJ-MOS,an optimized structure"vertical variable doping super-junction MOSFET(VVD-SJ)"is proposed.Based on the analysis using the charge superposition principle,it is observed that the VVD-SJ,in which the impurity concentration of the P-pillar gradually decreases while that of the N-pillar increases from top to bottom,improves the electric field distribution and mitigates charge imbalance(CIB).Experimental results demonstrate that the optimized 600 V VVD-SJ achieves a 35.90%expansion of the pro-cess window.
  • 摘要：The novel HfO2-based ferroelectric field effect transistor(FeFET)is considered a promising candidate for next-genera-tion nonvolatile memory(NVM).However,a series of reliability issues caused by the fatigue effect hinder its further develop-ment.Therefore,a comprehensive understanding of the fatigue mechanisms of the device and optimization strategies is essen-tial for its application.The fundamental mechanism of the fatigue effect is attributed to charge trapping and trap generation based on the current studies,and the underlying causes,occurrence locations and specific impacts are analyzed in this review.In particular,the asymmetric trapping/detrapping of electrons and holes,as well as the relationship between the ferroelectric(FE)polarization and charge trapping,are given particular attention.After categorizing and summarizing the current progress,we propose a series of optimization strategies derived based on the fatigue mechanisms.
  • 摘要：Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.
  • 摘要：This paper introduces a high-precision bandgap reference(BGR)designed for battery management systems(BMS),fea-turing an ultra-low temperature coefficient(TC)and line sensitivity(LS).The BGR employs a current-mode scheme with chopped op-amps and internal clock generators to eliminate op-amp offset.A low dropout regulator(LDO)and a pre-regula-tor enhance output driving and LS,respectively.Curvature compensation enhances the TC by addressing higher-order nonlinear-ity.These approaches,effective near room temperature,employs trimming at both 20 and 60°C.When combined with fixed cur-vature correction currents,it achieves an ultra-low TC for each chip.Implemented in a CMOS 180 nm process,the BGR occu-pies 0.548 mm²and operates at 2.5 V with 84μA current draw from a 5 V supply.An average TC of 2.69 ppm/℃ with two-point trimming and 0.81 ppm/℃ with multi-point trimming are achieved over the temperature range of-40 to 125℃.It accommo-dates a load current of 1 mA and an LS of 42 ppm/V,making it suitable for precise BMS applications.
  • 摘要：In order to solve the problems of low overload power in MEMS cantilever beams and low sensitivity in traditional MEMS fixed beams,a novel MEMS microwave power detection chip based on the dual-guided fixed beam is designed.A gap between guiding beams and measuring electrodes is designed to accelerate the release of the sacrificial layer,effectively enhanc-ing chip performance.A load sensing model for the MEMS fixed beam microwave power detection chip is proposed,and the mechanical characteristics are analyzed based on the uniform load applied.The overload power and sensitivity are investi-gated using the load sensing model,and experimental results are compared with theoretical results.The detection chip exhibits excellent microwave characteristic in the 9-11 GHz frequency band,with a return loss less than-10 dB.At a signal fre-quency of 10 GHz,the theoretical sensitivity is 13.8 fF/W,closely matching the measured value of 14.3 fF/W,with a relative error of only 3.5%.These results demonstrate that the proposed load sensing model provides significant theoretical support for the design and performance optimization of MEMS microwave power detection chips.
  • 摘要：A two-way K/Ka-band series-Doherty PA(SDPA)with a distributed impedance inverting network(IIN)for millimeter wave applications is presented in this article.The proposed distributed IIN contributes to achieve wideband linear and power back-off(PBO)efficiency enhancement.Implemented in 65 nm bulk CMOS technology,this work realizes a measured 3 dB band-width of 15.5 GHz with 21.2 dB peak small-signal gain at 34.2 GHz.Under 1-V power supply,it achieves OP1dB over 13.4 dBm and Psat over 16 dBm between 21 to 30 GHz.The measured maximum Psat,OP1dB,peak/OP1dB/6dBPBO PAE results are 17.5,14.7 dBm,and 28.2%/23.2%/13.2%.Without digital pre-distortion(DPD)and equalization,EVMs are lower than-25.2 dB for 200 MHz 64-QAM signals.Besides,this work achieves-33.35,-23.52,and-20 dB EVMs for 100 MHz 256-QAM,600 MHz 64-QAM and 2 GHz 16-QAM signals at 27 GHz without DPD and equalization.
  • 摘要：In the applications such as food production,the environmental temperature should be measured continuously dur-ing the entire process,which requires an ultra-low-power temperature sensor for long-termly monitoring.Conventional tempera-ture sensors trade the measurement accuracy with power consumption.In this work,we present a battery-free wireless tempera-ture sensing chip for long-termly monitoring during food production.A calibrated oscillator-based CMOS temperature sensor is proposed instead of the ADC-based power-hungry circuits in conventional works.In addition,the sensor chip can harvest the power transferred by a remote reader to eliminate the use of battery.Meanwhile,the system conducts wireless bidirectional communication between the sensor chip and reader.In this way,the temperature sensor can realize both a high precision and battery-free operation.The temperature sensing chip is fabricated in 55 nm CMOS process,and the reader chip is imple-mented in 65 nm CMOS technology.Experimental results show that the temperature measurement error achieves±1.6℃ from 25 to 50℃,with battery-free readout by a remote reader.
  • 摘要：In DSP-based SerDes application,it is essential for AFE to implement a pre-ADC equalization to provide a better sig-nal for ADC and DSP.To meet the various equalization requirements of different channel and transmitter configurations,this paper presents a 112 Gbps DSP-Based PAM4 SerDes receiver with a wide band equalization tuning AFE.The AFE is realized by implementing source degeneration transconductance,feedforward high-pass branch and inductive feedback peaking TIA.The AFE offers a flexible equalization gain tuning of up to 17.5 dB at Nyquist frequency without affecting the DC gain.With the pro-posed AFE,the receiver demonstrates eye opening after digital FIR equalization and achieves 6×10^(-9) BER with a 29.6 dB inser-tion loss channel.
  • 摘要：Perovskite solar cells(PSCs),which utilize a hybrid organic–inorganic lead halide perovskite as the light-absorbing semiconductor,have emerged as a highly promising photovoltaic technology over the past decade[1−5].
  • 摘要：This Special Topic of the Journal of Semiconductors(JOS)features expanded versions of key articles presented at the 2024 IEEE International Conference on Integrated Circuits Technologies and Applications(ICTA),which was held in Hangzhou,Zhejiang,China,from October 25 to 27,2024.
  • 摘要：Computing-in-memory(CIM)has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks.Resistive random access memory(RRAM)based CIM has the advantage of high computing density,non-volatility as well as high energy efficiency.However,previous CIM research has predominantly focused on realizing high energy efficiency and high area efficiency for inference,while little attention has been devoted to addressing the challenges of on-chip programming speed,power consumption,and accuracy.In this paper,a fabri-cated 28 nm 576K RRAM-based CIM macro featuring optimized on-chip programming schemes is proposed to address the issues mentioned above.Different strategies of mapping weights to RRAM arrays are compared,and a novel direct-current ADC design is designed for both programming and inference stages.Utilizing the optimized hybrid programming scheme,4.67×programming speed,0.15×power saving and 4.31×compact weight distribution are realized.Besides,this macro achieves a normalized area efficiency of 2.82 TOPS/mm2 and a normalized energy efficiency of 35.6 TOPS/W.
  • 摘要：In the implementation of quantum key distribution,Security certification is a prerequisite for social deployment.Trans-mitters in decoy-BB84 systems typically employ gain-switched semiconductor lasers(GSSLs)to generate optical pulses for encod-ing quantum information.However,the working state of the laser may violate the assumption of pulse independence.Here,we explored the dependence of intensity fluctuation and high-order correlation distribution of optical pulses on driving cur-rents at 2.5 GHz.We found the intensity correlation distribution had a significant dependence on the driving currents,which would affect the final key rate.By utilizing rate equations in our simulation,we confirmed the fluctuation and correlation origi-nated from the instability of gain-switched laser driven at a GHz-repetitive frequency.Finally,we evaluated the impact of inten-sity fluctuation on the secure key rate.This work will provide valuable insights for assessing whether the transmitter is operat-ing at optimal state in practice.
  • 摘要：The(010)-oriented substrates of β-Ga_(2)O_(3) are endowed with the maximum thermal conductivity and fastest homoepi-taxial rate,which is the preferred substrate direction for high-power devices.However,the size of(010)plane wafer is critically limited by die in the commercial edge-defined film-fed growth(EFG)method.It is difficult to grow the β-Ga_(2)O_(3) crystal with(010)principal face due to the(100)and(001)are cleavage planes.Here,the 2-inch diameter(010)principal-face β-Ga_(2)O_(3) sin-gle crystal is successfully designed and grown by improved EFG method.Unlike previous reported techniques,the single crys-tals are pulled with[001]direction,and in this way the(010)wafers can be obtained from the principal face.In our experi-ments,tree-like defects(TLDs)in(010)principal-face bulk crystals are easy to generate.The relationship between stability of growth interface and origin of TLDs are thoroughly discussed.The TLDs are successfully eliminated by optimizing growth condi-tions.The high crystalline quality of(010)-oriented substrates are comprehensive demonstrated by full width at half maximum(FWHM)with 50.4 arcsec,consistent orientation arrangement of(010)plane,respectively.This work shows that the(010)-ori-ented substrates can be obtained by EFG method,predicting the commercial prospects of large-scale(010)-oriented β-Ga_(2)O_(3) substrates.
  • 摘要：As traditional von Neumann architectures face limitations in handling the demands of big data and complex computa-tional tasks,neuromorphic computing has emerged as a promising alternative,inspired by the human brain's neural networks.Volatile memristors,particularly Mott and diffusive memristors,have garnered significant attention for their ability to emulate neuronal dynamics,such as spiking and firing patterns,enabling the development of reconfigurable and adaptive computing systems.Recent advancements include the implementation of leaky integrate-and-fire neurons,Hodgkin-Huxley neurons,opto-electronic neurons,and time-surface neurons,all utilizing volatile memristors to achieve efficient,low-power,and highly inte-grated neuromorphic systems.This paper reviews the latest progress in volatile memristor-based artificial neurons,highlight-ing their potential for energy-efficient computing and integration with artificial synapses.We conclude by addressing chal-lenges such as improving memristor reliability and exploring new architectures to advance memristor-based neuromorphic com-puting.

    Journal of Semiconductors的期刊信息

    • 曾用名：半导体学报(英文版);半导体学报;Chinese Journal of Semiconductors
    • 创刊时间：1980
    • 地区：CN
    • 语言：中文
    • 热门主题：硅 CMOS 砷化镓 GAAS 半导体 SOI CMOS技术 CMOS工艺 GAN SI
    • 学科分类：

      4

      Engineering:Electrical and Electronic Engineering;Materials Science:Electronic, Optical and Magnetic Materials;Materials Chemistry;Physics and Astronomy:Condensed Matter Physics;

    Journal of Semiconductors的获奖情况

    • • 卓越计划期刊
    • • 90年获中科院优秀期刊二等奖
    • • 92年获国家科委、中共中央宣传部和国家新闻出版署全国优秀期刊评比三等奖
    • • 97年国家科委、中共中央中宣传部和国家新出版署三等奖
    • • 中国期刊方阵“双效”期刊

    Journal of Semiconductors的收录情况

    • 中国·北大核心期刊（2008版）
    • 中国·北大核心期刊（2004版）
    • 中国·北大核心期刊（2000版）
    • 中国·北大核心期刊（1996版）
    • 中国·北大核心期刊（1992版）
    • 中国·中国科技核心期刊
    • 中国·中国科学引文数据库-核心（2023-2024）
    • 中国·中国科学引文数据库-核心（2021-2022）
    • 中国·中国科学引文数据库-核心（2019-2020）
    • 中国·中国科学引文数据库-核心（2017-2018）
    • 中国·中国科学引文数据库-核心（2015-2016）
    • 中国·中国科学引文数据库-核心（2013-2014）
    • 中国·中国科学引文数据库-核心（2011-2012）
    • 美国·Web of Science数据库
    • 荷兰·Scopus数据库
    • 日本·日本科学技术振兴机构数据库
    • 英国·科学文摘数据库
    • 美国·工程索引
    • 美国·EBSCO学术数据库
    • 中国·中国科技期刊卓越行动计划
    • 美国·化学文摘（网络版）

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    • 通讯地址：北京912信箱
    • 邮编：100083
    • 联系电话：010-82304277
    • 邮箱：jos@semi.ac.cn
    • 期刊栏目：SPECIAL TOPIC ON SEMICONDUCTOR MATERIALS GENOME INITIATIVE:NEW CONCEPTS AND DISCOVERRIES；INVITED REVIEW PAPERS；SEMICONDUCTOR PHYSICS；SEMICONDUCTOR MATERIALS；SEMICONDUCTOR DEVICES；SEMICONDUCTOR INTEGRATED CIRCUITS
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