High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs

摘要

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f/sub t/ =210 GHz and microwave low noise and high gain properties (NF/sub min/ = 0.8 dB and G/sub ass/=17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the downscaling trends.