Status of AlGaN/GaN HEMT technology - a UCSB perspective

摘要

The following major technological advances (i) the ability to grow high quality materials on sapphire and SiC, (ii) the advent of SiN passivation to eliminate current slump or dispersion, (iii) advanced processing, and (iv) implementation of field plates have taken AlGaN/GaN HEMTs to commercialization in the relatively short time of approximately a decade. In this paper, we present the highlights of this research.