A realistic large-signal microwave PHEMT transistors model for SPICE

摘要

A comprehensive large-signal HEMT model that provides a realistic description of measured characteristics over all operating regions for different PHEMTs is presented. The model was previously tested in harmonic-balance based simulators and for the first time it has been implemented inside the time domain SPICE simulator. In order to do that, a new set of routines and libraries has been developed. The procedure introduced here can be extended to properly simulate other kind of devices described in terms of equivalent circuits. DC and scattering simulation results show very good agreement with the experimental measurements.