PARAMETER EXTRACTION METHOD FOR QUASI-PHYSICAL LARGE-SIGNAL MODEL FOR MICROWAVE GALLIUM NITRIDE HIGH-ELECTRON-MOBILITY TRANSISTORS

摘要

A parameter extraction method for quasi-physical large-signal model for microwave gallium nitride high-electron-mobility transistors (GaN HEMTs). The method includes: 1) acquiring a data set of parameters for a large-signal model for a plurality of different microwave transistors GaN HEMTs having the same size; 2) performing statistical analysis of physical parameters of the large-signal model and sub-models thereof: 3) characterizing the correlation between the physical parameters by factor analysis; and 4) predicting the output characteristics of the GaN HEMTs.