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How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range?

机译：如何在可接受的温度范围内进行尖端镓氮化镓高电子移动晶体管遇到灾难性故障？

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Sungyoung Song; Stig Munk-Nielsen; Christian Uhrenfeldt;
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1. How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range? [J] . Song Sungyoung, Munk-Nielsen Stig, Uhrenfeldt Christian IEEE Transactions on Power Electronics . 2020,第7期

机译：如何在可接受的温度范围内进行尖端镓氮化镓高电子移动晶体管遇到灾难性故障？
2. Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors [J] . Longobardi Giorgia, Udrea Florin, Sque Stephen, Power Electronics, IET . 2015,第12期

机译：通过测量和技术-计算机辅助设计仿真研究金属-绝缘体-半导体场效应晶体管和高电子迁移率晶体管的氮化镓/氮化镓铝/氮化镓高压晶体管中的表面电荷和陷阱
3. A variable gain reconfigurable mixer using gallium nitride high-electron-mobility transistor for wireless local area network applications [J] . Vishnoi Manoj Kumar, Srikant Satya Sai, Mahapatra Rajendra Prasad, International journal of communication systems . 2021,第17期

机译：用于无线局域网应用的氮化镓高电子迁移晶体管可变增益可重新配置混合器
4. Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement [C] . Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, International Conference on Microwave, Radar and Wireless Communications . 2016

机译：氮化镓微波晶体管的可靠性：从加速测试和工艺改进评估失败机制和稳定性的框架
5. Investigation of electrically active defects in gallium nitride, aluminum gallium nitride , and aluminum gallium nitride/gallium nitride high electron mobility transistors [D] . Arehart, Aaron R. 2009

机译：研究氮化镓，氮化铝镓和氮化铝镓/氮化镓高电子迁移率晶体管中的电活性缺陷
6. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications [O] . Y. C. Lin, S. H. Chen, P. H. Lee, 2020

机译：具有厚铜金属化特性的氮化镓（GaN）高电子迁移率晶体管用于Ka波段应用的功率密度为8.2 W / mm
7. Design, Fabrication And Characterization Of Gallium Nitride High-Electron-Mobility Transistors [O] . Felbinger Jonathan 2010

机译：氮化镓高电子迁移率晶体管的设计，制造和表征

How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range?

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