METHOD FOR MODELING SOI FIELD-EFFECT TRANSISTOR SPICE MODEL SERIES

摘要

Disclosed is a method for modeling an SOI field-effect transistor SPICE model series. An auxiliary component is manufactured via designing, electrical characteristic data are acquired; a model parameter is extracted on the basis of intermediate data; a SPICE model is established for a floating-body structure SOI field-effect transistor; a model parameter is extracted using the intermediate data and auxiliary component data; a macro model is coded; and an SPICE model is established for a body-tied structure SOI field-effect transistor. The modeling method provided in the present invention takes into consideration the effect of a parasitic transistor of a tied part within the body-tied structure. The model series established using the method allows for improved accuracy in responding to the practical working conditions and electrical characteristics of the body-tied structure and floating-body structure SOI field-effect transistor, thus improving the fitting effect of the model.