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A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

机译:使用50 nm变质HEMT技术,150至220 GHz平衡倍线MMIC

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摘要

A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150- and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180- and 220 GHz. Good fundamental rejection was ensured by using a Marchand balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.
机译:开发了一种共面毫米波掺杂覆盖整个G频带的掺杂。基于50 nm变质HEMT技术,该电路演示了超过-12dBm的输出功率,在150-至220 GHz之间,输入功率为0 dBm。通过将输入功率增加到12 dBm,在180-至220GHz之间的频率范围内获得输出功率超过0 dBm。通过使用Marchand Baluan来平衡设计来确保良好的根本拒绝。倍增器还用于为170至200GHz电阻FET混合器提供LO信号,产生10dB的转化损失。

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