Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs

机译：开关MMIC设计精确谐波建模的先进曲折栅极P-HEMT模型

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摘要

This paper presents a non-linear model of a meander gate p-HEMT for switch design. The model combines a modified Parker-Skellern IV form with a custom charge model to accurately predict large signal performance of meander-gate based switches. Comparison between modeled and measured results of a 0.5 mm gate length SPDT switch shows a accurate prediction of the 2/sup nd/ and 3/sup rd/ harmonic generation at the output.

机译：本文介绍了开关设计曲折栅极P-HEMT的非线性模型。该模型将改进的帕克 - Skellern IV形式与自定义电荷模型相结合，以准确地预测基于曲底基的开关的大信号性能。 0.5 mm栅极长度SPDT开关的建模和测量结果之间的比较显示了输出处的2 / SUP ND /和3 / SUP RD /谐波产生的精确预测。

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《European Gallium Arsenide and Other Semiconductor Application Symposium》|2005年||共4页
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Holm M.A.; Brookbanks D.M.;
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中图分类自动化技术、计算机技术;
关键词
HEMT integrated circuits; MMIC; harmonic generation; integrated circuit design; microwave switches; Parker-Skellern IV form; advanced meander gate p-HEMT model; harmonic generation; harmonic modeling; meander-gate based switches; switch MMIC designs;

机译：HEMT集成电路;MMIC;谐波生成;微波开关;帕克 - Skellern IV形式;高级曲折门P-HEMT模型;谐波产生;谐波建模;曲折基于栅极开关;开关MMIC设计;开关MMIC设计;

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专利

1. Accurately modeling the drain to source current in recessed gate P-HEMT devices [J] . Fernandez T., Garcia J.A. IEEE Electron Device Letters . 1999,第11期

机译：精确地建模凹入式P-HEMT器件中的漏极至源极电流
2. An accurate dual-gate HFET nonlinear model for millimeter-wave MMIC design [J] . Rachid Allam, Christophe Kolanowski, Jean-Claude De Jaeger, International journal of RF and microwave computer-aided engineering . 1998,第4期

机译：用于毫米波MMIC设计的精确双栅极HFET非线性模型
3. This summary focuses on the initial application of time-dependent surrogates for the AM process. Two advanced surrogate models, i.e. HDMR and PINNs, were employed to replace expensive simulations of the AM process, providing accurate and efficient approximations. In the future, we will employ these techniques to model all steps of the AM process to allow for efficient optimization. [J] . Transactions of the American nuclear society . 2020,第Juna期

机译：本摘要侧重于初始应用时间依赖于AM过程的代理人。两个先进的代理模型，即HDMR和Pinns，用于更换AM过程的昂贵模拟，提供准确和有效的近似。在未来，我们将采用这些技术来模拟AM过程的所有步骤，以允许有效优化。
4. Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs [C] . Holm, M.A., Brookbanks, . 2005

机译：先进的曲折门p-HEMT模型可对开关MMIC设计进行准确的谐波建模
5. Modeling, Design and Control of Advanced Softswitching Boost Converters for PV-Based Battery Charging Systems [D] . Ghali, Rami. 2019

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6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

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7. Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs [O] . Holm M.A., Brookbanks D. M. 2005

机译：先进的曲折门p-HEMT模型可对开关MMIC设计进行精确的谐波建模
8. Application of Design of Experiments and Surrogate Modeling within the NASA Advanced Concepts Office, Earth-to-Orbit Design Process. [R] . Zwack, M. R., Dees, P. D., Holt, J. B. 2016

机译：实验设计和代理建模在Nasa高级概念办公室，地球到轨道设计过程中的应用。

Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs

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