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Conference on the physics and technology of semiconductor devices and integrated circuits

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1.Concentration dependence of diffusivity in polysilicon

机译：多晶硅扩散率浓度依赖性
- 作者：M.R. Murti;K.V. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
2.Electrical and optical properties of CuGa0.5In0.5Se2 thin films

机译：Cuga0.5in0.5se2薄膜的电气和光学性质
- 作者：Author(s): Y.Aparna Sri Venkateswara Univ. Tirupati India;P.S. Reddy;B.Srinivasulu Naidu;P.J. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
3.Amorphous CuInTe2 thin films

机译：无定形Cuinte2薄膜
- 作者：S.K. Viswanathan;F.M. Amanullah;S.S. Avadhani;B.S. Gopalam
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
4.Dc and ac conductivity of amorphous CuInTe2 thin films

机译：无定形Cuinte2薄膜的DC和AC电导率
- 作者：S.K. Viswanathan;F.M. Amanullah;S.S. Avadhani;B.S. Gopalam
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
5.Chemical deposition of large-area silver sulphide films

机译：大面积氧化银膜的化学沉积
- 作者：S.S. Dhumure;C.D. Lokhande
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
6.Photoemission from the surface of silicon using a simple local dielectric model

机译：使用简单的局部介电模型从硅表面的光曝光
- 作者：R.K. Thapa;P.Das North Bengal Univ. Siliguri India;Nikhiles Kar
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
7.New solar cell based on cooperative functioning of electrovoltaic and photovoltaic effects

机译：基于电磁和光伏效应的协同功能的新太阳能电池
- 作者：S.N. Singh
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
8.Development of a process simulator for optical waveguide fabrication by ion exchange in glass

机译：通过离子交换在玻璃中的光波导制造工艺模拟器的研制
- 作者：Sushila Singh;Bipin Singh;Arvind D. Shaligram
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
9.Direct evidence for negative-U nature of DX center in AlxGa1-xAs

机译：Alxga1-XAS中DX中心的负面U特性的直接证据
- 作者：Subhasis Ghosh;Vikram Kumar
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
10.Thermal analysis of (ZnTe)x(CdSe)1-x crystals

机译：（ZnTe）X（CDSE）1-x晶体的热分析
- 作者：V.K. M. Rani;R.P. Vijaya Lakshmi;D.R. Reddy;B.K. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
11.Photovoltaic properties of ZnxCd1-xS/CuGaSe2 thin film solar cells

机译：ZnXCD1-XS / Cugase2薄膜太阳能电池的光伏性能
- 作者：K.T. R. Reddy;P.J. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
12.Exciton mobility in a GaAs/AlGaAs quantum well

机译：在GaAs / Algaas量子井中的激子移动性
- 作者：Partha Ray;P.K. Basu
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
13.Electrical and optical properties of pure and silver-doped zinc telluride films

机译：纯银掺杂碲化锌薄膜的电气和光学性质
- 作者：N.U. Reddy;S.Uthanna Sri Venkateswara Univ. Tirupati India;P.J. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
14.Effect of carrier diffusion on the breakdown characteristics of avalanche diodes

机译：载流子扩散对雪崩二极管击穿特性的影响
- 作者：J.P. Banerjee;R.Mukherjee T.D.B. College Raniganj W.B. India;M.Mitra Univ. of Calcutta Calcutta India;S.K. Roy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
15.Postbreakdown behaviour of metal-oxide-semiconductor diodes

机译：金属氧化物半导体二极管的断裂行为
- 作者：K.S. Gurumurthy;K.Ramkumar Indian Institute of Science Bangalore Karnataka India;M.Satyam Indian Institute of Science Bangalore Karnataka India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
16.Electrical and optical properties of sprayed indium tin oxide films

机译：喷涂铟锡氧化物膜的电气和光学性质
- 作者：Author(s): V.Vasu Indian Institute of Technology Madras India;A.Subrahmanyam Indian Institute of Technology Madras India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
17.Zn3P2 as a material for optoelectronics devices

机译：Zn3P2作为光电子设备的材料
- 作者：Jan Misiewicz;Jan Szatkowski;N.Mirowska Technical Univ. of Wroclaw Wroclaw Poland;Zbigniew Gumienny;E.Placzek-Popko Technical Univ. of Wroclaw Wroclaw Poland.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
18.Dielectric behaviour of (ZnTe)x(CdSe)1-x single crystals

机译：（ZnTe）x（CDSE）1-x单晶的介电行为
- 作者：V.K. M. Rani;R.P. Vijaya Lakshmi;D.R. Reddy;B.K. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
19.Tools for defect characterization in semiconductor devices: EBIC and voltage contrast

机译：半导体器件中缺陷表征的工具：EBIC和电压对比度
- 作者：Author(s): M.Natarajan Univ. of Kerala Trivandrum India;V.K. Vaidyan;M.K. Radhakrishnan
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
20.Preparation and characterization of Mn-doped sprayed p-CuInS2 films

机译：Mn掺杂喷涂的P-CuinS2薄膜的制备与表征
- 作者：R.P. Vijaya Lakshmi;D.R. Reddy;B.K. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
21.Electronic conduction and density of states in Pb-modified amorphous germanium sulfide semiconductors

机译：PB改性非晶锗硫化物半导体中的电子传导和密度
- 作者：S.K. Malik;K.L. Bhatia
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
22.Aging characteristics of CdSe thin films at low temperatures

机译：低温下CDSE薄膜的老化特征
- 作者：P.J. Sebastian;V.Sivaramakrishnan Indian Institute of Technology Madras India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
23.Variation of bandgap with composition in (ZnTe)x(CdSe)1-x single crystals

机译：（ZnTe）x（CDSE）1-x单晶组合物的带隙的变化
- 作者：V.K. M. Rani;R.P. Vijaya Lakshmi;D.R. Reddy;B.K. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
24.Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon

机译：掺杂浓度和界面态密度对多晶硅晶界屏障高度的影响
- 作者：D.P. Singh;P.S. Basak
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
25.Window coating prospects of Cu2Se thin films

机译：CU2SE薄膜的窗户涂层前景
- 作者：Author(s): M.Pattabi Mangalore Univ. Mangalagangotri India;P.J. Sebastian;V.Sivaramakrishnan Indian Institute of Technology Madras India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
26.Characterization of hydrogenated amorphous silicon carbide films

机译：氢化非晶碳化硅膜的表征
- 作者：Author(s): S.Uthanna Sri Venkateswara Univ. Tirupati India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
27.Electrical properties of indium antimony films

机译：铟锑膜的电气性质
- 作者：Surinder Kaur;Taminder Singh;R.K. Bedi
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
28.Study on flash-evaporated tin selenide films

机译：闪蒸蒸发锡硒化膜的研究
- 作者：Taminder Singh;Surinder Kaur;R.K. Bedi
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
29.Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing

机译：通过快速热处理形成的Al-Si欧姆接触的正电子寿命研究
- 作者：R.N. Kulkarni;N.M. Kulkarni;Arvind D. Shaligram
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
30.Electrical characterization of the reactive-ion-etch-induced damages in silicon

机译：硅中反应离子蚀刻损伤的电气表征
- 作者：Author(s): N.Ramadas Indian Telephone Industries Bangalore India;V.Premachandran Indian Telephone Industries Bangalore India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
31.Electrical properties of Cd0.3Ni0.7+xMnxFe2O4 ferrites

机译：CD0.3NI0.7 + XMNXFE2O4铁氧体的电气特性
- 作者：M.G. Patil;V.C. Mahajan;B.V. Bhise;S.M. Chandake;B.L. Patil;A.B. Patil;S.R. Sawant;S.A. Patil
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
32.Room temperature hydrogenation studies on silicon

机译：室温氢化研究硅
- 作者：P.C. Srivastava;D.N. Tripathi;S.Chandra Banaras Hindu Univ. Varanasi India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
33.Properties of 35-GHz InP DDR

机译：35-GHz INP DDR的特性
- 作者：S.P. Pati;J.P. Banerjee;S.K. Roy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
34.Chemical spray deposition of CuGaS2 thin films

机译：Cugas2薄膜的化学喷涂沉积
- 作者：Author(s): K.Subbaramaiah Sri Venkateswara Univ. Tirupati India;V.S. Raja
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
35.XPS depth profile of ion-beam-synthesized A12O3SiO2 composite oxide layers on silicon

机译：离子束合成的A12O3SiO2复合氧化物层的XPS深度分布在硅上
- 作者：S.K. Dubey;A.D. Yadav;P.M. Raole;P.D. Prabhawalkar
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
36.Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films

机译：多晶GaAs薄膜上的热氧化物的角度分辨XPS研究
- 作者：S.S. Avadhani;S.K. Viswanathan;B.S. Gopalam
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
37.Nonexponential transition rates from deep levels

机译：深度级别的非行为过渡率
- 作者：Andrew K. Jonscher
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
38.Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET

机译：表面重组和调制频率对离子植入GaAs OPFET的内在参数的影响
- 作者：V.K. Singh;S.R. Singh;B.B. Pal
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
39.Studies on semiconducting samarium-sulphide electrolyte junction cells

机译：半导体钐 - 硫化物电解质结细胞的研究
- 作者：S.B. Jundale;C.D. Lokhande
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
40.Electrical transport in some polymetallo phthalocyanines

机译：在一些聚酞酞酞菁中的电气运输
- 作者：Anasuya Raghunathan;T.S. Natarajan;G.Rangarajan Indian Institute of Technology Berkeley CA USA;S.Venkatachalam Vikram Sarabhai Space Ctr. Trivandrum India;P.T. Manoharan
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
41.Ultrathin oxide (SiOx) grown on HF-treated silicon

机译：在HF处理的硅上生长的超薄氧化物（SiOx）
- 作者：E.T. P. Benny;J.Majhi Indian Institute of Technology Madras India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
42.Growth and XPS depth profiling of thermal oxides on polycrystalline GaAs thin films

机译：多晶GaAs薄膜上的热氧化物的生长和XPS深度分析
- 作者：S.S. Avadhani;S.K. Viswanathan;B.S. Gopalam
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
43.Spatial hole-burning effects in distributed-feedback semiconductor lasers

机译：分布式反馈半导体激光器中的空间空穴燃烧效果
- 作者：Author(s): B.Borchert Siemens AG Munich Federal Republic of Germany.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
44.Mechanism of etching of silicon-based materials in a reactive plasma

机译：反应等离子体中硅基材料蚀刻的机理
- 作者：Author(s): V.Premachandran Indian Telephone Industries Bangalore India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
45.Electrical resistance variation in Se(10)Sb(10)Te(80) ternary semiconductor thin films

机译：SE（10）SB（10）TE（80）三元半导体薄膜的电阻变化
- 作者：V.D. Das;S.Aruna Madras Univ. Madras India;K.S. Raju
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
46.Microprocessor-based PID controller for low-temperature studies

机译：基于微处理器的PID控制器，用于低温研究
- 作者：B.P. Reddy;S.V. Pandu Rangaiah
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
47.Photostable amorphous-silicon films by low-pressure chemical vapour deposition

机译：通过低压化学气相沉积光稳定的非晶硅膜
- 作者：K.K. Sharma;C.Manfredotti Univ. of Torino Torino Italy.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
48.Hydrogenation effects on Ni/n-Si(111) Schottky diode characteristics

机译：对Ni / N-Si（111）肖特基二极管特性的氢化作用
- 作者：P.P. Sahay;M.Shamsuddin Banaras Hindu Univ. Varanasi India;R.S. Srivastava
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
49.Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride

机译：硼氯硝化镉双植入时间表的逆转效果
- 作者：Rakesh Kumar;M.B. Dutt;R.Nath Solid State Physics Lab. New Delhi India;V.Gopal Solid State Physics Lab. Delhi India;Y.P. Khosla;K.K. Sharma
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
50.Transport properties of semiconducting GaxIn1-xSb solid solutions

机译：半导体GAXIN1-XSB固体溶液的运输特性
- 作者：T. K. Silva Prasad Gupta;P.P. Sahay;M.Shamsuddin Banaras Hindu Univ. Varanasi India;P.Ramachandrarao Banaras Hindu Univ. Varanasi India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
51.Kinetics of thermal donors and new oxygen donors in silicon

机译：硅热吹塑器和新氧气供体的动力学
- 作者：Author(s): D.Tandon G.B. Pant Univ. of Agriculture and Technology Pantnagar India;Shyam Singh
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
52.Kinematical studies of glass transition in Se100-xTex by DSC technique

机译：DSC技术SE100-XTEX玻璃过渡的运动学研究
- 作者：Author(s): P.Agarwal Harcourt Butler Technological Institute Kanpur India;J.S. Rai;A.Kumar Harcourt Butler Technological Institute Kanpur India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
53.Properties of spray pyrolysed SnO2:Sb films

机译：喷雾热溶性SnO2的性质：Sb膜
- 作者：Author(s): A.Arulgnanam Pondicherry Univ. Pondicherry India;S.Balachandran Bishop Heber College Tiruchirapalli India;A.Balasubramanian Pondicherry Univ. Pondicherry India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
54.Preparation and characterization of pulse-plated CdSe films

机译：脉冲镀CDSE膜的制备与表征
- 作者：K.R. Murali;V.Subramanian Central Electrochemical Research Institute Karaikudi Tamilnadu India;N.Rangarajan Central Electrochemical Research Institute Karaikudi Tamilnadu India;A.S. Lakshmanan;S.K. Rangarajan
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
55.Analytical modeling of the channel-charge in ion-implanted MOSFETs and MESFETs

机译：离子植入MOSFET和MESFET中的通道充电的分析模型
- 作者：Author(s): S.Karmalkar Indian Institute of Technology Madras India;K.N. Bhat
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
56.Some aspects of CdTe

机译：CDTE的一些方面
- 作者：Shyam Singh
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
57.Influence of dopants on the electrical transport properties of Pbo.8Sno2Te thin films

机译：掺杂剂对PbO.8SnO2TE薄膜电气运输性能的影响
- 作者：Pawan Sikka
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
58.Growth of silicon nitride by PECVD

机译：PECVD的氮化硅生长
- 作者：Author(s): V.Jayan Indian Institute of Technology Madras India;Dev Alok;P.R. Vaya
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
59.Fundamental optical properties of Zn3P2

机译：ZN3P2的基本光学性质
- 作者：Jan Misiewicz
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
60.Vapour phase growth and characterization of II-VI mixed crystals

机译：II-VI混合晶体的气相生长和表征
- 作者：D.R. Reddy;B.K. Reddy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
61.Effect of back-gate bias and interface trap density on the subthreshold characteristics of thin film SOI-MOSFETs

机译：背栅偏置和接口捕集密度对薄膜SOI-MOSFET亚阈值特性的影响
- 作者：Author(s): C.Mallikarjun Indian Institute of Technology Madras India;K.N. Bhat
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
62.Broadening of cyclotron resonance line of 2-D electron gas in a multiple-quantum-well structure

机译：多量子阱结构中的2-D电子气体的回旋谐振线扩大
- 作者：M.P. Chaubey
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
63.Physics of overstress-related failures in semiconductor devices

机译：半导体器件中过度相关的失败的物理
- 作者：M.K. Radhakrishnan;M.Natarajan Univ. of Kerala Trivandrum India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
64.Shubnikov-de Haas effect in II-V semiconducting compounds

机译：Shubnikov-de HAAS效果II-V半导体化合物
- 作者：Author(s): J.Cisowski Polish Academy of Sciences Zabrze Poland.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
65.Transport properties of Bi-doped Ge-Se glasses

机译：双掺杂GE-SE眼镜的运输特性
- 作者：Pawan Sikka
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
66.Development and characterization of device grade thin films of compound semiconductors

机译：化合物半导体装置级薄膜的开发与表征
- 作者：P.C. Mathur
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
67.Electronic transport processes in disordered semiconductors

机译：无序半导体中的电子运输过程
- 作者：Author(s): S.Summerfield Univ. of Warwick Coventry United Kingdom.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
68.Quantum-well injection transit time device

机译：量子孔注入过渡时间装置
- 作者：B.B. Pal;R.U. Khan
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
69.Effect of ultrathin metal layers on the plasma anodization of GaAs

机译：超薄金属层对GaAs等离子阳极氧化的影响
- 作者：Sh. Lanyi;E.Pincik Institute of Physics Bratislava Czechoslovakia;V.Nadazdy Institute of Physics Bratislava Czechoslovakia.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
70.Magnetotunneling effect in semiconductors: a clue to the measurement of tunneling time

机译：半导体中的磁管效应：隧道时间测量的线索
- 作者：Dilip K. Roy
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
71.Microstructure and electronic properties of amorphous semiconductors in the system Ge-S-Bi

机译：系统GE-S-BI中非晶半导体的微观结构和电子性质
- 作者：K.L. Bhatia
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
72.Electrical magnetic and thermal properties of ternary A2B2O7 pyrochlores: a family of magnetic semiconductors

机译：三元A2B2O7烧火的电磁和热性能：一系列磁半导体
- 作者：Author(s): G.Rangarajan Indian Institute of Technology Berkeley CA USA;Narayani Senthilkumaran;N.P. Raju;E.Gmelin Max-Plank-Institut fuer Festkoerperforschung Stuttgart Federal Republic of Germany;R.K. Kremer
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
73.Studies on ITO/Si junctions prepared by spray pyrolysis technique

机译：喷雾热解技术制备的ITO / SI结的研究
- 作者：Author(s): A.Subrahmanyam Indian Institute of Technology Madras India;V.Vasu Indian Institute of Technology Madras India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
74.High-field-induced hot-carrier temperature bandgap narrowing and carrier multiplication in bulk semiconductors

机译：高场诱导的热载波温度带隙变窄和散装半导体中的载流子倍增
- 作者：Vijay K. Arora;Hiroyuki Sakaki
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
75.Polarizabilities in the study of optical properties of semiconductors

机译：半导体光学性质研究中的偏振性
- 作者：Author(s): V.Ramamurthy Sri Krishnadevaraya Univ. Hyderabad India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
76.Ferroelectric integrated optics and semiconductor memory devices

机译：铁电集成光学和半导体存储器件
- 作者：Author(s): H.Tiwary Ravishankar Univ. Raipur India.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
77.Investigations on surface passivated CdS and Cds:As-based photoelectrochemical cells

机译：表面钝化CDS和CDS的研究：基于光电化学细胞
- 作者：L.P. Deshmukh;D.S. Hulle;P.P. Hankare;A.H. Manikshete
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
78.Strain in semiconductor structures and devices

机译：半导体结构和装置中的应变
- 作者：David J. Dunstan;Alfred R. Adams
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年
79.Organometallic molecular precursors for low-temperature MOCVD of III-V semiconductors

机译：III-V半导体低温MOCVD的有机金属分子前体
- 作者：Author(s): F.Maury Lab. de Cristallochimie Reactivite et Protection des Materi Toulouse Cedex France.
- 会议名称：《Conference on the physics and technology of semiconductor devices and integrated circuits》 | 1992年