Effect of back-gate bias and interface trap density on the subthreshold characteristics of thin film SOI-MOSFETs

摘要

Subthreshold characteristics of a thin-film Silicon On Insulator (SOI) MOSFET are analyzed using a charge sheet model, taking into consideration the charge coupling effects between the front and back channels. The effects of back gate bias and the interface trap density are studied using the analytical expressions derived in this approach, and it is shown that the near ideal subthreshold slopes can be realized when the back gate is connected to the front gate. The results also show that when the back channel is biased to accumulation the subthreshold slopes become worst.