Transport properties of Bi-doped Ge-Se glasses

摘要

A series of bulk amorphous samples of Ge$-15$/Se$-85 $MIN x$/Bi$-x$/ (x $EQ 0, 2, 4, 6, 8, 10) were prepared by the rapid quenching technique. Electrical transport properties such as dc conductivity and thermoelectric power were measured in the temperature range 80 - 350 K. An abrupt increase in the dc conductivity is observed due to the incorporation of Bi into the host Ge-Se system. The conduction sign changed from p to n at 8 $LS $MUL $LS 10 as evidenced by the measurement of thermopower. The experimental data is explained in the light of existing theories.