Ultrathin tunnel oxides (SiO$-x$/) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation. These oxides were characterized using variable illumination current-voltage (V$-oc$/ -J$-sc$/) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (V$-oc$/), short circuit current (J$-sc$/), ideality factor (n) and reverse saturation current (J$-o$/) are studied as a function of oxidation time. The interface state density D$-its$/ for the HF treated sample was found to decrease from 2 $MUL 10$+12$/ cm$+$MIN@2$/eV$+$MIN@1$/ to 9.21 $MUL 10$+11$/ cm$+$MIN@2$/eV$+$MIN@1$/. Highly reproducible, good quality ultrathin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid.
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机译：超薄隧道氧化物（SiO $-$ /）在硅上生长，用5％氢氟酸预处理，使用高压，低温氧化。在半透明金属栅极MIS二极管上使用可变照明电流 - 电压（V-$ / -J $-）测量来表征这些氧化物。作为氧化时间的函数，研究了开路电压（V $-oc $ /），短路电流（J $-uss $ /），理想因子（n）和反向饱和电流（J $ -o $ /） 。界面状态密度D $ /用于HF处理的样本，从2 $ MUL 10 $ + 12 $ / cm $ + $ min @ 2 $ / ev $ + $ min @ 1 $ / 9.21 $ MUL 10 $ + 11 $ / cm $ + $ min @ 2 $ / ev $ + $ min @ 1 $ /。通过在氢氟酸中预处理晶片来获得高度可重复的，优质的超薄氧化物。
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