Characterization of hydrogenated amorphous silicon carbide films

摘要

A-SiC:H films were prepared by magnetron sputtering of silicon in an atmosphere of argon, hydrogen and acetylene gas on c-Si and glass substrates maintained at a temperature of 250$DGR@C. It was indicated from the FTIR spectroscopy that the vibrational modes of SiC- and SiHm-shifted to higher energies due to the incorporation of carbon in a-Si:H network. The decrease of dark and photo conductivity with the carbon content was attributed to the additional defects produced by alloying of carbon in the a-Si:H.