Quantum-well injection transit time device

摘要

A quantum well injection transit time (QWITT) diode has been proposed recently to improve the performance of quantum well devices incorporating the effect of transit time of carriers. Earlier, transit time devices such as IMPATT, BARITT, DOVATT, TRAPATT, TUNETT show different types of performances with certain limitations. QWITT is a low noise device applicable to the sub-millimeter frequency range. Large signal simulations show that a QWITT device may be capable of producing approximately $PLU@5 dBm power at 200 GHz.