Postbreakdown behaviour of metal-oxide-semiconductor diodes

摘要

Metal-Oxide-Semiconductor (MOS) diodes with $APEQ@300 angstroms thick, thermally grown silicide dioxide (SiO$-2$/) films were subjected to time-dependent oxide breakdown (TDOB) by applying a constant voltage (electrical stress). The breakdown of the oxide was achieved under the accumulation region of the substrate. After the breakdown of the oxide, V -I characteristics of the devices were measured. The observed characteristics are similar to the characteristics of a solid-state rectifier in nature. This behavior of the MOS samples has been qualitatively explained in this paper, on the basis of the nucleation and growth of the crystalline silicon from the oxide layers during the oxide breakdown process.