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Electrical transport in some polymetallo phthalocyanines

机译:在一些聚酞酞酞菁中的电气运输

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Complex ac impedance measurements on Poly metallo phthalocyanines before heat treatment (I$LB@MPc$RB$-n$/(M $EQ Cu, Ni)) have been performed and the data analyzed using the Havriliak-Negami dispersion relation for polymers. The parameters so obtained are reported. Heat treated polymers (II$LB@MPc$RB$-n$/ (M $EQ Cu, Ni)) show an increase in dc electrical conductivity, $sigma@, by several orders of magnitude. The temperature dependence of $sigma is in accordance with that expected for variable range hopping of carriers in 3 dimensions (VRH 3D) for II$LB@CuPc$RB$-n$/ and that expected for VRH of carriers in 2D (VRH 2D) for II$LB@NiPc$RB$-n$/. The significant deviation from linearity of the log($sigma$ROOT@T) vs T$+$MIN@1/4$/ plot at low temperatures can be accounted for by the model proposed by Sheng which is based on electron transfer across insulating gaps in conducting pathways by fluctuation induced tunneling. Hall mobility measurements of II$LB@CuPc$RB$-n$/ show that the carriers are holes and the Hall constant was found to be 6 $MUL 10$+$MIN@4$/ approximately ega@m/T at RT.
机译:在热处理前的聚酞菁酞菁上的复杂交流阻抗测量(I $ LB @ MPC $ RB $ -N $ /(M $ EQ CU,NI))以及使用HAVRILIAK-Negami分散关系进行分析的数据。报告了如此获得的参数。热处理聚合物(II $ LB @ MPC $ RB $ -N $ /(M $ EQ CU,NI))显示直流电导率,锡格玛@的几个数量级。 $ Sigma的温度依赖性根据II $ LB @ Cupc $ RB $ -N $ /且预期的载波中的载流子的可变范围跳跃的预期值(VRH 3D)在2D中的VRH(VRH 2D) )对于ii $ lb @ nipc $ rb $ -n $ /。从日志($西格玛$ ROOT @ T)与T $ + $ MIN @四分之一$ /在低温下的情节可以通过盛提出的模型是基于电子转移占到整个绝缘的线性度的显著偏差通过波动引起的隧道进行途径的差距。 HALL移动测量II $ LB @ CUPC $ RB $ -N $ /显示运营商是漏洞,并且霍尔常数被发现为6 $ MUL 10 $ + $ MIN @ 4 $ / A大约EGA @ M / T 。

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