Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET

摘要

The effect of surface recombination and modulated frequency on the intrinsic parameters of an ion implanted GaAs optical field effect transistor have been analyzed. The study reveals that the gate-source capacitance increases with gate-source voltage, first slowly, and then sharply under normally OFF condition with the increase of modulated frequency. However, the surface recombination reduces these effects depending upon the trap center density. These variations are small in a normally ON device. Also, the drain-source resistance is found to increase with the increase of modulating frequency, but it reduces with the reduction of trap- center density at a fixed flux density and drain-source voltage.