Reactive ion etch induced damage in silicon have been studied in terms of its electrical characteristics. Samples were plasma etched in the commonly used gases SF$-6$/, CF$-4$/ and O$-2$/. The extent of damage was determined by evaluating the Schottky barrier diodes fabricated on the etched silicon surfaces. The behavior of these defects was also studied. These results were further compared with damages induced by plasmas of chemically active (N$-2$/) and chemically inactive (Ar) gases.
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