XPS depth profile of ion-beam-synthesized A12O3SiO2 composite oxide layers on silicon

摘要

Aluminum films (99.999%) were deposited onto p-type $LS@100$GRT silicon wafers. The samples were implanted at room temperature with 1 $MUL 10$+17$/, 3 $MUL 10$+17$/ and 5 $MUL 10$+17$/ O$-2$/$+PLU$/ - cm$+$MIN@2$/ at 30 keV. XPS spectra was recorded for Al$-2p3/2$/ and Si$-2p$/ lines at various depths. XPS studies confirmed the formation of Al$-2$/O$-3$/ at all doses and SiO$-2$/ at 5 $MUL 10$+17$/ O$- 2$/$+$PLU$/ - cm$+$MIN@2$/.