Growth of silicon nitride by PECVD

摘要

Silicon nitride and silicon oxynitride films were grown using silane and locally available nitrogen and ammonia by PECVD technique. The results of structural characterization by IR absorption and ellipsometry studies are reported. MNS test structures were fabricated and a surface state density of approximately 10$+11$/ cm$+$MIN@2$/ was obtained from C-V measurements. Study on the probable current condition mechanism in these films showed results consistent with Frenkel-Poole mechanism.