Electrical and optical properties of CuGa0.5In0.5Se2 thin films

摘要

CuGa$-0.5$/In$-0.5$/Se$-2$/ thin films grown on Corning 7059 glass substrates at T$-x$/ $EQ 598 - 648 K in a vacuum better than 2 $MUL 10$+$MIN@6$/ torr were nearly stoichiometric and polycrystalline. Thermoelectric power and Hall effect measurements indicated p-type conduction in the films. The temperature dependence of the electrical conductivity suggests that above 400 K the conduction mechanism is intrinsic, whereas extrinsic/impurity conduction dominates in the range 303 - 400 K. The optical absorption studies revealed a fundamental energy gap of 1.29 eV.