Electrical properties of indium antimony films

摘要

The electrical properties of In$-x$/Sb$-1$MIN@x$/(0 $LS x $LS 1) alloy films deposited on glass substrate in a vacuum of 10$+$MIN@5$/ torr have been studied. It is observed that films with composition around x $EQ 0.6 show minimum resistivity, maximum carrier mobility and more order in structure. The charge carriers appear to be holes for all compositions. The thermoelectric power of InSb films increase initially and shows maxima around x $EQ 0.2, beyond which a decrease is found with the increase in In content.