Radiation damage due to B$+$PLU$/ ion implantation in p-type HgCdTe has been found to create Hg interstitials giving rise to n-type conversion. The implantation energies were kept at 50 and 100 keV with a dose of 1 $MUL 10$+13$/ cm$+$MIN@2$/ each. The effect of implantation with ascending and descending orders of energies were found to be quite different from each other. Radiation enhanced diffusion is thought to be responsible for this anomaly.
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机译：已发现P型HGCDTE中B $ + $ PLU $ /离子植入引起的辐射损伤，以创建带来N型转换的HG间质型。将植入能量保持在50和100 keV，剂量为1 $ MUL 10 $ + 13 $ / cm $ + $ min @ 2 $ /每一个。发现植入与上升和降序的能量顺序的影响彼此完全不同。辐射增强的扩散被认为是对这种异常的原因。
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