首页> 外文学位 >Characterization of mercury cadmium telluride/cadmium zinc telluride(211)B heterostructures and mercury telluride/mercury cadmium telluride superlattices.
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Characterization of mercury cadmium telluride/cadmium zinc telluride(211)B heterostructures and mercury telluride/mercury cadmium telluride superlattices.

机译:碲化镉汞/碲化镉锌(211)B的异质结构和碲化汞/碲化镉镉超晶格的表征。

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摘要

In this dissertation, microstructural investigations on different types of defects in Hg1−xCdxTe grown by molecular beam epitaxy (MBE) are described. MBE growth of HgCdTe is not straightforward. Hg1−xCdxTe epilayers usually suffer from various different types of defects depending on the growth conditions. Transmission electron microscopy (TEM) is ideal to study these defects. However, it has not been fully utilized, presumably due to the difficulties of preparing high-quality TEM samples. In this research, TEM sample preparation procedures were first established, and then extensive TEM and high-resolution electron microscopy (HREM) as well as small-probe microanalysis have been carried out to investigate the microstructure and origin of major defects in MBE-grown HgCdTe alloys. First, surface defects, such as surface crater defects, surface ridges, and surface volcanos, were studied. High-resolution observations revealed the origin and microstructure of surface crater defects. The microstructure of surface ridges and volcanos was studied by cross-sectional TEM. The surface ridges appeared to be caused by faceting of HgCdTe, leading to faceting of the CdTe capping layer and twin formation within the layer. The surface volcanos had threading defects underneath, but these were confirmed to nucleate within the HgCdTe epilayer. Second, growth defects such as low-temperature (Hg-rich) structural defects, epilayer/substrate interface dislocations, and precipitates were studied. It was found that MBE growth lower than about 180°C increased dislocation and loop densities. The microstructure of HgCdTe/CdZnTe(211)B and the effect of the CdTe buffer layer were studied and it was shown that growth conditions had more impact on the interface microstructure than lattice mismatch due to the CdTe buffer layer. The microstructure of precipitates and their surrounding strain field were observed on the atomic scale. Small-probe analysis showed that the precipitates appeared to be slightly Hg-deficient, although the precise nature of the precipitates is still unclear. The microstructure of HgTe/HgCdTe superlattices (SLs) and the effects of annealing were studied and correlated with optical and electric properties.
机译:本文介绍了通过分子束外延(MBE)生长的Hg 1-x Cd x Te中不同类型缺陷的显微组织研究。 HgCdTe的MBE生长并不简单。 Hg 1-x Cd x Te外延层通常根据生长条件而遭受各种不同类型的缺陷。透射电子显微镜(TEM)是研究这些缺陷的理想选择。但是,由于制备高质量TEM样品的困难,它尚未得到充分利用。在这项研究中,首先建立了TEM样品制备程序,然后进行了广泛的TEM和高分辨率电子显微镜(HREM)以及小探针显微分析,以研究MBE生长的HgCdTe的主要缺陷的微观结构和成因。合金。首先,研究了表面缺陷,例如表面火山口缺陷,表面脊和表面火山。高分辨率观测揭示了表面火山口缺陷的起源和微观结构。用横断面TEM研究了山脊和火山的微观结构。表面脊似乎是由HgCdTe的刻面引起的,从而导致CdTe覆盖层的刻面和该层内的孪晶形成。表面火山在下面具有穿线缺陷,但已确认它们在HgCdTe外延层内成核。其次,研究了生长缺陷,例如低温(富汞)结构缺陷,外延层/衬底界面位错和沉淀物。发现低于约180℃的MBE生长增加了位错和环密度。研究了HgCdTe / CdZnTe(211)B的微观结构和CdTe缓冲层的作用,结果表明,生长条件对界面微结构的影响大于由于CdTe缓冲层引起的晶格失配。在原子尺度上观察到沉淀物的微观结构及其周围的应变场。小探针分析表明,尽管沉淀物的确切性质仍不清楚,但沉淀物似乎略有汞缺乏。研究了HgTe / HgCdTe超晶格(SLs)的微观结构以及退火的影响,并将其与光学和电学性质相关联。

著录项

  • 作者

    Aoki, Toshihiro.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Engineering Materials Science.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 171 p.
  • 总页数 171
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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