We used high-resolution x-ray diffraction to measure precisely structural modifications in variously composed Hg_(1-x)Cd_(x)Te layers which were fabricated by different growth techniques and subjected to boron implantation to form p-n junctions. Analysis of implantation-induced features in the diffraction profiles allowed us to deduce the interstitials concentration remaining in the sample interior and, thus, to obtain important information on post-implantation defect migration. As a result, a percolation problem in the migration of Cd interstitials was discovered in samples with x展开▼
