Properties of 35-GHz InP DDR

机译：35-GHz INP DDR的特性

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Microwave device characteristics of 35 GHz InP DDR have been obtained through accurate numerical simulation, and those are compared with the properties of Si and GaAs DDRs. The results indicate InP as a promising material for fabrication of IMPATT devices.

机译：通过精确的数值模拟获得了35 GHz INP DDR的微波器件特性，并与SI和GaAs DDR的性质进行了比较。结果表明INP作为用于制造IMPATT器件的有希望的材料。

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《Conference on the physics and technology of semiconductor devices and integrated circuits 》|1992年||共4页
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S.P. Pati; J.P. Banerjee; S.K. Roy;
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1. The voltage-dependent IP3 performance of a 35-GHz InAlAs/InGaAs-InP HBT amplifier [J] . Kobayashi K.W., Oki A.K. IEEE Microwave and Guided Wave Letters . 1997 ,第3期

机译：35 GHz InAlAs / InGaAs-InP HBT放大器的电压相关IP3性能
2. Impact of strained GaAs spacer between InP emitter and GaAs_(1-y)Sb_y base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs_(1-y)Sb_y/InP DHBTs [J] . Takuya Hoshi, Norihide Kashio, Hiroki Sugiyama, Journal of Crystal Growth . 2014 ,第juna1期

机译：InP发射极和GaAs_（1-y）Sb_y之间应变的GaAs隔离层对MOCVD生长的InP / GaAs_（1-y）Sb_y / InP DHBTs的结构性能和电学特性的影响
3. Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP(311)B substrates: Theory and experiment [J] . C. Cornet, A. Schliwa, J. Even, Physical review. B, Condensed Matter And Materials Physics . 2006 ,第3期

机译：InP（100）和InP（311）B衬底上InAs / InP量子点的电子和光学性质：理论和实验
4. Properties of 35-GHz InP DDR [C] . S.P. Pati, Sambalpur Univ., Sambalpur, Conf on Physics and Technology of Semiconductor Devices and Integrated Circuits . 1992

机译：35 GHz InP DDR的属性
5. GROWTH AND PROPERTIES OF In[1-x]GaxAs ON InP AND ITS APPLICATION TO DEVICES [D] . Takeda, Yoshikazu 1980

机译：InP上In [1-x] GaxAs的生长，性质及其在器件中的应用
6. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography [O] . Paweł Holewa, Jakub Jasiński, Artem Shikin, 2021

机译：站点选择性地生长INAS / INP量子点的光学性质具有通过嵌段共聚物光刻预定定位的预定定位
7. Optical properties of novel semiconductor nanostructures : wurtzite InP/InAs/InP core-multishell nanowires [O] . 後藤健, ゴトウケン 2009

机译：新型半导体纳米结构的光学性质：纤锌矿InP / InAs / InP核-多壳纳米线

Properties of 35-GHz InP DDR

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