Exciton mobility in a GaAs/AlGaAs quantum well

机译：在GaAs / Algaas量子井中的激子移动性

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We have calculated the mobility of 1s-excitons confined in a GaAs/AlGaAs quantum well limited by different scattering mechanisms over a temperature range from 10 K to 150 K for different well-widths.

机译：我们已经计算了在GaAs / Algaas量子中限制的1S-Excitons的迁移率，其在不同井宽的温度范围内的不同散射机构限制在10k至150k的温度范围内。

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《Conference on the physics and technology of semiconductor devices and integrated circuits 》|1992年||共3页
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Partha Ray; P.K. Basu;
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1. An (AlGaAs/GaAs/AlGaAs)_(60) resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells [J] . Chaldyshev V.V., Sholohov D.E., Vasilev A.P. Semiconductors . 2010 ,第9期

机译：基于量子阱中重空穴激子的第二量子约束能级的（AlGaAs / GaAs / AlGaAs）_（60）共振布拉格结构
2. Quantum Monte Carlo simulation of exciton-exciton scattering in a GaAs/AlGaAs quantum well [J] . Shumway J Physica, E. Low-dimensional systems & nanostructures . 2006 ,第1a2期

机译：GaAs / AlGaAs量子阱中激子-激子散射的量子蒙特卡罗模拟
3. An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well [J] . Pozela Y, Pozela K, Juciene V, Semiconductors . 2007 ,第12期

机译：在GaAs量子阱中引入了用于极性光子的薄InAs势垒的结果，两势垒AlGaAs / GaAs / AlGaAs异质结构中的电子迁移率增加
4. Exciton mobility in a GaAs/AlGaAs quantum well [C] . Partha Ray, Univ. of Calcutta, Calcutta, Conf on Physics and Technology of Semiconductor Devices and Integrated Circuits . 1992

机译：GaAs / AlGaAs量子阱中的激子迁移率
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Quantum Monte Carlo Simulation of Exciton-Exciton Scattering in a GaAs/AlGaAs Quantum Well [O] . Shumway, J. 2005

机译：量子激子 - 激子散射的量子蒙特卡罗模拟 Gaas / alGaas量子阱
8. Large Increase of Electron Mobility in a Modulation-Doped AlGaAs/GaAs/ AlGaAs Quantum Well with an Inserted Thin AlAs Barrier. [R] . Pozela, K., Poleza, J., Juciene, V. 2001

机译：具有插入的薄alas势垒的调制掺杂alGaas / Gaas / alGaas量子阱中电子迁移率的大幅增加。

Exciton mobility in a GaAs/AlGaAs quantum well

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