Semiconductor nanoheterostructures with stepped QUANTUM WELL AlGaAs / GaAs / InGaAs / GaAs / AlGaAs on a GaAs substrate with a combined doping

摘要

The proposed utility model relates to a semiconductor nanoheterostructures used to manufacture transistors and microwave monolithic integrated circuits C- and X-band with high output power. Semiconductor nanoheterostructures comprising a monocrystalline semi-insulating substrate is GaAs, the buffer layer of GaAs, a layer of Al _x Ga _1-x As, a stepped quantum well barrier layer is Al _x Ga _1-x As and a contact layer of GaAs, characterized in that the speed quantum well comprises of several layers: an upper transition layer GaAs, in which there are two δ-layer Si comma GaAs layer, the volume-doped layer of in _y Ga _1-y As and lower transition layer GaAs, in which there are two δ-layer Si comma GaAs layer. Using utility model allows on one hand to increase the concentration two-dimensional electron gas and the other - to minimize undesirable scattering of electrons on the donors. Two ill.