Effect of growth interruption and strain buffer layer on PL performance of AlGaAs/GaAs/InGaAs quantum well for 1065 nm wavelength lasers

摘要

Strained InGaAs/GaAs quantum well (QW) was grown by low-pressure metallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer were introduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. Good PL results were obtained under condition of growth an interruption of 10 s combined with a moderate strain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed into devices. Broad area lasers (1130 μm × 500 μm) show very low threshold current densities (43 A/cm2) and high slop efficiency (0.34 W/A, per facet).