Large Increase of Electron Mobility in a Modulation-Doped AlGaAs/GaAs/ AlGaAs Quantum Well with an Inserted Thin AlAs Barrier.

摘要

The electron (polar optical (PO)) phonon scattering mechanisms which determine the electron mobility in a Al(0.25)Ga(0.75) As/GaAs/Al(0.25) Ga(0.75). As quantum well (QW) with an inserted thin AlAs barrier are considered. It is shown that the decrease of the second subband electron scattering by PO-phonon emission is responsible for the large increase of the mobility in the QW with the inserted barrier.