Quantum thin wire fabrication method using GaAs / AlGaAs substrate

摘要

The present invention relates to a quantum thin wire manufacturing method using a GaAs / AlGaAs substrate, the conventional quantum thin wire manufacturing method to form a quantum thin wire by directly forming a V groove on the GaAs substrate and subjected to epitaxial growth thereon, The conventional quantum thin wire manufacturing method as described above has a problem in that the epi layer is uneven due to the V groove formed on the substrate. In order to solve this problem, the present invention further grows AlGaAs on the substrate to form V-grooves to form quantum thin lines more effectively, and protects the fine thin lines without a mask by using a diffusion limiting solution. The present invention provides a method for fabricating a quantum thin line using a GaAs / AlGaAs substrate, which effectively removes wells and easily flattens an uneven epitaxial layer due to V groove formation.