METHOD FOR MANUFACTURING AlGaAs SUPPORT SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL WAFER, METHOD FOR MANUFACTURING LED, AlGaAs SUPPORT SUBSTRATE, EPITAXIAL WAFER, AND LED

摘要

Disclosed is an AlGaAs support substrate (10) comprising a GaAs substrate (11) having  a main surface (11a) and a back surface (11b) which is a surface opposite to the main surface (11a), a first AlxGa(1-x)As layer (12) provided on the main surface (11a) side of the GaAs substrate (11), and a second AlyGa(1-y)As layer (13) provided on the back surface (11b) side of the GaAs substrate (11).  Also disclosed is a method for manufacturing an AlGaAs support substrate (10) comprising the following steps.  A GaAs substrate (11) is prepared.  A first AlxGa(1-x)As layer (12) is formed by a liquid phase growth method on the main surface (11a) side of the GaAs substrate (11).  A second AlyGa(1-y)As layer (13) is formed by a liquid phase growth method on the back surface (11b) side of the GaAs substrate (11).