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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Quantum Monte Carlo simulation of exciton-exciton scattering in a GaAs/AlGaAs quantum well
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Quantum Monte Carlo simulation of exciton-exciton scattering in a GaAs/AlGaAs quantum well

机译:GaAs / AlGaAs量子阱中激子-激子散射的量子蒙特卡罗模拟

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We present a computer simulation of exciton-exciton scattering in a quantum well. Specifically, we use quantum Monte Carlo techniques to study the bound and continuum states of two excitons in a 10 nm wide GaAs/Al0.3Ga0.7As quantum well. From these bound and continuum states we extract the momentum-dependent phase shifts for s-wave scattering. A surprising finding of this work is that a commonly studied effective-mass model for excitons in a 10 nm quantum well actually supports two bound biexciton states. The second, weakly bound state may dramatically enhance exciton-exciton interactions. We also fit our results to a hard-disk model and indicate directions for future work. (c) 2006 Elsevier B.V. All rights reserved.
机译:我们提出了量子阱中激子-激子散射的计算机模拟。具体来说,我们使用量子蒙特卡洛技术研究10 nm宽的GaAs / Al0.3Ga0.7As量子阱中两个激子的束缚态和连续态。从这些束缚态和连续态中,我们提取了与动量相关的相移,用于s波散射。这项工作的一个令人惊讶的发现是,在10 nm量子阱中,通常研究的激子有效质量模型实际上支持两个结合的双激子态。第二弱结合状态可以显着增强激子-激子相互作用。我们还将结果拟合到硬盘模型中,并指出未来的工作方向。 (c)2006 Elsevier B.V.保留所有权利。

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