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Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

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1.InP based materials for long wavelength optoelectronics grown in amultiwafer AIX 2400G3 Planetary Reactor(R)

机译：InP基材料用于长波长光电多晶片AIX 2400G3行星反应器（R）
- 作者：Schmitt T.;Deufel M.;Daulesberg M.;Heuken M.;Juergensen H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
2.Multi quantum well (MQW) lasers at 1550 nm fabricated with a singleepitaxial selective growth step by MOVPE without waveguide etching

机译：单个制造的1550 nm多量子阱（MQW）激光器无波导刻蚀的MOVPE外延选择性生长步骤
- 作者：Van Caenegem T.;Van Thourhout D.;Van Daele P.;Baets R.;Moerman I.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
3.Conference Proceedings. 2001 International Conference on IndiumPhosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

机译：会议论文集。 2001年国际铟会议磷化物及相关材料。第13届IPRM（目录号01CH37198）
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
4.1.5-1.6 μm VCSEL for metro WDM applications

机译：适用于城域WDM应用的1.5-1.6μmVCSEL
- 作者：Chang-Hasnain C.J.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
5.InP-based VCSELs for 1.55 μm wavelength range

机译：1.55μm波长范围的基于InP的VCSEL
- 作者：Amann M.-C.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
6.Probing of localized reflections in photonic devices and circuitson InP using an upgraded high precision reflectometer

机译：探测光子器件和电路中的局部反射在InP上使用升级的高精度反射仪
- 作者：Rao E.V.K.;Gottesman Y.;Piot D.;Lucatero L.;Vergnol E.;POmmi M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
7.Novel RTA technique for large diameter GaAs wafers managing tominimize both dopant diffusion and slip formation

机译：适用于大直径GaAs晶圆的新型RTA技术最小化掺杂剂扩散和滑移形成
- 作者：Sakurada T.;Kiyama M.;Nakajima S.;Tatsumi M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
8.Heterointerface optimization in InP based strained MQW laserstructures using metalorganic growth technologies

机译：基于InP的应变MQW激光器的异质界面优化使用金属有机生长技术的结构
- 作者：Kroner P.;Baumeister H.;Rieger J.;Veuhoff E.;Marti O.;Heinecke H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
9.Transmission measurements at 1.55 μm on photonic-crystalultrashort bend waveguides fabricated on InP based guiding layer

机译：在光子晶体上以1.55μm的透射率进行测量基于InP的导引层制造的超短弯曲波导
- 作者：Talneau A.;Le Gouezigou L.;Bouadma N.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
10.High speed 1.3 μm AlGaInAs DFB-LD with λ/4-shift grating

机译：带有λ/ 4位移光栅的高速1.3μmAlGaInAs DFB-LD
- 作者：Takiguchi T.;Hanamaki Y.;Kadowaki T.;Tanaka T.;Takemi M.;Tomita N.;Mihashi Y.;Omura E.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
11.A 60 GHz high power composite channel GaInAs/InP HEMT on InPsubstrate with L_G=0.15 μm

机译：InP上的60 GHz高功率复合通道GaInAs / InP HEMTL _{G = 0.15μm的底物}
- 作者：Boudrissa M.;Delos E.;Wallaert X.;Theron D.;De Jaeger J.C.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
12.Integration of heterostructure bipolar transistor andelectroabsorption waveguide modulator based on a multifunctional layerdesign for 1.55 μm

机译：异质结双极晶体管与基于多功能层的电吸收波导调制器设计为1.55μm
- 作者：Reimann T.;Schneider M.;Velling P.;Neumann S.;Agethen M.;Bertenburg R.M.;Heinzelmann R.;Stohr A.;Jager D.;Tegude F.-J.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
13.Performance of new self-aligned InP/InGaAs HBT's usingcrystallographically defined emitter contact technology

机译：新型自对准InP / InGaAs HBT的性能晶体学定义的发射极接触技术
- 作者：Moonjung Kim;Taeho Kim;Sookun Jeon;Myounghoon Yoon;Young-Se Kwon;Kyounghoon Yang
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
14.Electrochemical formation of self-assembled nanopore arrays astemplates for MBE growth of InP-based quantum wires and dots

机译：自组装纳米孔阵列的电化学形成基于InP的量子线和点的MBE生长的模板
- 作者：Hirano T.;Ito A.;Sato T.;Ishikawa F.;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
15.Optimization of novel oxide-free insulated gate structure for InPhaving an ultrathin silicon interface control layer

机译：InP新型无氧化物绝缘栅结构的优化具有超薄硅界面控制层
- 作者：Zhengwen Fu;Takahashi H.;Hashizume T.;Kasai S.;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
16.46.9-nm wavelength-selectable arrayed DFB lasers with integratedMMI coupler and SOA

机译：集成了46.9 nm波长可选阵列DFB激光器MMI耦合器和SOA
- 作者：Oohashi H.;Shibata Y.;Ishii H.;Kawaguchi Y.;Kondo Y.;Yoshikuni Y.;Tohmori Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
17.Deeply etched 1.55 μm wavelength distributed-reflector laserswith vertical grating

机译：深度蚀刻的1.55μm波长分布式反射器激光器带有垂直格栅
- 作者：Wiedmann J.;Ebihara K.;Kim H.C.;Matsui K.;Tamura S.;Chen B.;Arai S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
18.Non-destructive characterization of heterointerfaces bydepth-resolved cathodoluminescence and its application to InGaP/GaAsinterface

机译：异质界面的无损表征深度分辨阴极发光及其在InGaP / GaAs中的应用接口
- 作者：Ishikawa F.;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
19.Novel scheme for reducing the pattern effect in 40 Gbps SOA basedall-optical switch utilizing transparent CW assist light

机译：减少基于40 Gbps SOA的图案效应的新颖方案采用透明CW辅助灯的全光开关
- 作者：Tsurusawa M.;Nishimura K.;Usami M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
20.GaInAsN based lasers for the 1.3 and 1.5 μm wavelength range

机译：基于GaInAsN的激光器，波长范围为1.3和1.5μm
- 作者：Fischer M.;Gollub D.;Reinhardt M.;Forchel A.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
21.Device performance and transport properties of high gainmetamorphic InP/InGaAs heterojunction bipolar transistors at elevatedtemperature

机译：器件性能和高增益传输特性高温下的变质InP / InGaAs异质结双极晶体管温度
- 作者：Hong Yang;Hong Wang;Geok Ing Ng;Haiqun Zheng;Radhakrishnan K.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
22.Deviation from Vegard law in lattice matched InGaAs/InP epitaxialstructures

机译：晶格匹配InGaAs / InP外延中的Vegard定律偏差结构
- 作者：Ferrari C.;Villaggi E.;Armani N.;Carta G.;Rossetto G.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
23.Micro-Raman analysis of molar fraction in polycrystalline In_xGa_1-x for traveling liquidus zone growth method

机译：多晶In _{x中摩尔分数的显微拉曼分析 Ga _{1-x 用于行进液相区生长方法}}
- 作者：Islam M.R.;Verma P.;Yamada M.;Tatsumi M.;Kinoshita K.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
24.A numerical analysis to study the effects of process relatedvariations in the extrinsic base design on dc current gain ofInAlAs/InGaAs/InP DHBTs

机译：数值分析来研究过程相关的影响外在基础设计的变化取决于直流电流增益InAlAs / InGaAs / InP DHBT
- 作者：Hussain T.;Shi B.Q.;Nguyen C.;Madhav M.;Sokolich M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
25.A comparison of deep level effects on the DC characteristics of In_xGa_1-xP/In_0.20Ga_0.80As/GaAsand Al_0.24Ga_0.76As/In_0.20Ga_0.80As/GaAs high electron mobility transistors grown by solid sourceMBE

机译：深电平对In直流特性的影响比较_{x Ga _{1-x P / In _{0.20 Ga _{0.80 As / GaAs和Al _{0.24 Ga _{0.76 As / In _{0.20 Ga _{0.80固体源生长的 As / GaAs高电子迁移率晶体管MBE}}}}}}}}
- 作者：Yoon S.F.;Yip K.H.;Zheng H.Q.;Gay B.P.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
26.Influence of a surface on the Franz-Keldysh effect in n- and p-typeindium phosphide

机译：表面对n型和p型Franz-Keldysh效应的影响磷化铟
- 作者：Sakai M.;Kurayama T.;Niwa A.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
27.Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stressdepending on passivation films formed by PCVD

机译：由于偏置应力，InAlAs / InGaAs / InP HEMT的隔离性能下降取决于通过PCVD形成的钝化膜
- 作者：Moriguchi H.;Hoshi S.;Ohshima T.;Izumi T.;Tsunotani M.;Kimura T.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
28.Highly reliable 40 Gb/s electroabsorption modulator grown on InP:Fesubstrate

机译：在InP：Fe上生长的高度可靠的40 Gb / s电吸收调制器基质
- 作者：Takagi K.;Miyazaki Y.;Tada H.;Ishimura E.;Aoyagi T.;Nishimura T.;Hatta I.;Omura E.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
29.High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICs on3-inch InP substrates

机译：0.1μmInGaAs / InAlAs / InP HEMT MMIC的高可靠性3英寸InP基板
- 作者：Chou Y.C.;Leung D.;Scarpulla J.;Lai R.;Barsky M.;Grundbacher R.;Nishimoto M.;Liu P.H.;Streit D.C.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
30.Advances in InP HEMT technology for high frequency applications

机译：InP HEMT技术在高频应用中的进展
- 作者：Smith P.M.;Nichols K.;Kong W.;MtPleasant L.;Pritchards D.;Lender R.;Fisher J.;Actis R.;Dugas D.;Meharry D.;Swanson A.W.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
31.0.06 μm gate length metamorphic In_0.52Al_0.48As/In_0.53Ga_0.47As HEMTs on GaAs with high f_T and f_MAX

机译：0.06μm栅极长度变质In _{0.52 Al _{0.48高f的GaAs上的 As / In _{0.53 Ga _{0.47 As HEMT_{T 和f _MAX}}}}}
- 作者：Bollaert S.;Cordier Y.;Zaknoune M.;Happy H.;Lepilliet S.;Cappy A.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
32.Understanding the degradation of InP/InGaAs heterojunction bipolartransistors induced by silicon nitride passivation

机译：了解InP / InGaAs异质结双极的退化氮化硅钝化诱导的晶体管
- 作者：Hong Wang;Geok Ing Ng;Hong Yang;Radhakrishnan K.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
33.Formation and characterization ofAl_xMo_1-x-InP alloy electrode system forrealization of thermally stable ohmic contacts

机译：的形成与表征Al _{x Mo _{1-x / n-InP合金电极系统实现热稳定欧姆接触}}
- 作者：Atsuchi R.;Takeyama M.B.;Noya A.;Hashizume T.;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
34.1.26 μm GaInNAsSb-SQW lasers grown by gas-source MBE

机译：气源MBE生长的1.26μmGaInNAsSb-SQW激光器
- 作者：Shimizu H.;Kumada K.;Uchiyama S.;Kasukawa A.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
35.Well number dependence of highly strained GaIn(N)As MQW structuresby metalorganic chemical vapor deposition

机译：高应变GaIn（N）As MQW结构的阱数依赖性通过金属有机化学气相沉积
- 作者：Jikutani N.;Sato S.;Takahashi T.;Itoh A.;Satoh S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
36.InP self-assembled quantum dots embedded inIn_0.5Al_0.3Ga_0.2P grown on GaAssubstrates by metalorganic chemical vapor deposition

机译：InP自组装量子点嵌入在GaAs上生长的In _{0.5 Al _{0.3 Ga _{0.2 P金属有机化学气相沉积法制备基材}}}
- 作者：Jae-Hyun Ryou;Dupuis R.D.;Mathes D.T.;Hull R.;Reddy C.V.;Narayanamurti V.;Kellogg D.A.;Walter G.;Holonyak N. Jr.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
37.Realization of submicron-pitch linear arrays of nanometer-sizedInGaAs ridge quantum wires by selective MBE growth on patterned InPsubstrates

机译：纳米尺寸的亚微米间距线性阵列的实现通过在图案化的InP上进行选择性MBE生长的InGaAs脊量子线基材
- 作者：Jiang C.;Muranaka T.;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
38.Dislocation free strained InGaAlAs-MQW growth over an InGaAsP/InPgrating

机译：在InGaAsP / InP上无位错应变的InGaAlAs-MQW生长格栅
- 作者：Takemoto D.;Nakahara K.;Tsuchiya T.;Sudoh T.K.;Tsuji S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
39.First demonstration of 40 Gbps wavelength conversion with nopattern effect utilizing cross-phase modulation in an electroabsorptionwaveguide

机译：首次演示40 Gbps波长转换而无电吸收中利用交叉相位调制的图案效应波导
- 作者：Nishimura K.;Tsurusawa M.;Usami M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
40.Direct observation of intersubband relaxation dynamics andapplication to subpicosecond all-optical modulation

机译：直接观察子带间弛豫动力学和亚皮秒全光调制的应用
- 作者：Asano T.;Yoshizawa S.;Noda S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
41.Negative differential resistance in trench-type narrow InGaAsquantum wire

机译：沟槽型窄铟镓砷的负差分电阻量子线
- 作者：Kee-Youn Jang;Sugaya T.;Matsumo K.;Shimizu T.;Ogura M.;Sugiyama Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
42.Simultaneous measurements of transient photo-current andphotoluminescence for (Al_0.7Ga_0.3)_0.5In_0.5P/Al_xIn_1-xP-superlattices

机译：同时测量瞬态光电流和（Al _{0.7 Ga _{0.3 ）_{0.5 In的光致发光_{0.5 P / Al _{x In _{1-x P超晶格}}}}}}
- 作者：Ishitani Y.;Matsuya K.;Fujita T.;Nakasa K.;Harima Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
43.Internal electric field effects at orderedGa_0.5In_0.5P/GaAs heterointerface investigated byphotoreflectance spectroscopy

机译：有序内部电场效应Ga _{0.5 In _{0.5 P / GaAs异质界面的研究光反射光谱}}
- 作者：Yamashita K.;Nishida N.;Kakutani T.;Kita T.;Wang Y.;Murase K.;Geng C.;Scholz F.;Schweizer H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
44.1.31 μm GaInNAsSb/GaNAs-SQW lasers grown by gas-source MBE

机译：气源MBE生长的1.31μmGaInNAsSb / GaNAs-SQW激光器
- 作者：Shimizu H.;Kumada K.;Uchiyama S.;Kasukawa A.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
45.InP/InGaAs/InP double heterojunction bipolar transistors with 300GHz F_max

机译：具有300的InP / InGaAs / InP双异质结双极晶体管GHz F _max
- 作者：Krishnan S.;Dahlstrom M.;Mathew T.;Wei Y.;Scott D.;Urteaga M.;Rodwell M.J.W.;Liu W.K.;Lubyshev D.;Fang X.M.;Wu Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
46.Gas-source MBE growth of metamorphic InP/In_0.5Al_0.5As/In_0.5Ga_0.5As/InAsP high-electron-mobilitystructures on GaAs substrates

机译：InP / In _{0.5 Al _{0.5的气源MBE生长 As / In _{0.5 Ga _{0.5 As / InAsP高电子迁移率GaAs衬底上的结构}}}}
- 作者：Ouchi K.;Mishima T.;Kudo M.;Ohta H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
47.Optical and structural characterization of InGaAs/AlAsSb quantumwells grown by molecular beam epitaxy

机译：InGaAs / AlAsSb量子的光学和结构表征分子束外延生长的孔
- 作者：Mozume T.;Georgiev N.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
48.Low-damage etched/regrown interfaces of GaInAsP/InP wirelike laserwith strain-compensated MQW structure

机译：GaInAsP / InP线状激光器的低损伤蚀刻/再生长界面具有应变补偿的MQW结构
- 作者：Midorikawa H.;Nunoya N.;Muranushi K.;Tamura S.;Arai S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
49.Optical transitions in new semiconductor alloy GaAs_1-xBi_x with temperature-insensitive band gap

机译：新型半导体合金GaAs _{1-x Bi中的光学跃迁具有温度不敏感带隙的_x}
- 作者：Yoshida J.;Yamamizu H.;Kita T.;Oe K.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
50.Characterization of photonic crystal cavities: investigation on thecoupling between microresonators and waveguides

机译：光子晶体腔的表征：对光子晶体的研究微谐振器和波导之间的耦合
- 作者：Pottier P.;Letartre X.;Seassal C.;Grillet C.;Rojo-Romero P.;Viktorovitch P.;Le Vassor DYerville M.;Cassagne D.;Jouanin C.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
51.Fundamental evaluation of semiconductor waveguide-type in-linewavelength selective filter with Fabry-Perot etalon resonator

机译：半导体波导型在线的基本评估带有Fabry-Perot标准具谐振器的波长选择滤波器
- 作者：Otaka M.;Takahashi S.;Utaka K.;Horita M.;Yazaki T.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
52.Atomic hydrogen assisted selective MBE growth of InGaAs ridgequantum wire honeycomb network structures for binary-decision diagramquantum LSIs

机译：原子氢辅助InGaAs脊的选择性MBE生长量子线蜂窝网络的二进制决策图量子LSI
- 作者：Ito A.;Muranaka T.;Kasai S.;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
53.Realization of InAsP compliant substrates for the fabrication oflattice-mismatched InP-based devices

机译：实现用于InAsP的衬底的制造晶格不匹配的基于InP的器件
- 作者：Vanhollebeke K.;Nica J.;Moerman I.;Van Daele P.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
54.Study of GaAs(001) surface with adsorbed oxygen

机译：GaAs（001）表面吸附氧的研究
- 作者：Kasai Y.;Yamamura Y.;Inokuma T.;Iiyama K.;Takamiya S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
55.1.3 μm quantum-dot lasers with improved high temperatureproperties

机译：具有改善的高温的1.3μm量子点激光器属性
- 作者：Klopf F.;Krebs R.;Reithmaier J.P.;Forchel A.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
56.Transmission characteristics of 1.3 μm Fabry-Perot laser diodesintegrated with spot size converter for 2.5 Gbit/s applications

机译：1.3μmFabry-Perot激光二极管的传输特性与光点大小转换器集成，适用于2.5 Gbit / s应用
- 作者：Bouadma N.;Lucatero L.;Colson V.;Barthe F.;Leclerc D.;Gentner J.-L.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
57.Effect of phosphine plasma treatment on protection from Sipassivation in AlInAs/InGaAs HEMT due to F atoms

机译：磷化氢等离子处理对硅的保护作用F原子导致AlInAs / InGaAs HEMT中的钝化
- 作者：Yamamoto K.;Fujita N.;Nakajima S.;Sugino T.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
58.Feasibility of rapid thermal MOCVD growth for fabrication ofInP-based heterostructures

机译：快速热生长MOCVD的制造可行性基于InP的异质结构
- 作者：Kreinin O.;Bahir G.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
59.Influence of hole accumulation on the source resistance, kinkeffect, and on-state breakdown of InP-based HEMTs: light irradiationstudy

机译：空穴积累对源电阻，扭结的影响InP的HEMT的电子效应和状态击穿：光辐照研究
- 作者：Suemitsu T.;Fushimi H.;Kodama S.;Tsunashima S.;Kimura S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
60.Effects of growth rate on lateral compositional modulation ofInGaAsP/InP(001) grown by metalorganic molecular beam epitaxy

机译：生长速率对番茄侧向成分调制的影响金属有机分子束外延生长InGaAsP / InP（001）
- 作者：Ogasawara M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
61.Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μmlasers using metal-organic vapor-phase epitaxy

机译：GaInNAs / GaAs量子阱的低温生长达1.3μm金属有机气相外延的激光
- 作者：Plaine G.;Asplund C.;Sundgren P.;Mogg S.;Hammar M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
62.Fabrication of InGaAsP/InP Mach-Zehnder interferometer opticalamplifier switches by metalorganic vapor phase selective area epitaxy

机译：InGaAsP / InP Mach-Zehnder光学干涉仪的制作通过金属有机气相选择性区域外延进行的放大器开关
- 作者：Futakuchi N.;Xueliang Song;Miyashita D.;Kato M.;Nakano Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
63.Effect of strain relaxation layers in high Indium contentmetamorphic InGaAs/InAlAs modulation doped heterostructures

机译：应变松弛层在高铟含量中的作用变质InGaAs / InAlAs调制掺杂异质结构
- 作者：Gozu S.;Kita T.;Sato H.;Yamada S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
64.InP/InGaAsP wafer-bonded vertically coupled X-crossing multiplechannel optical add-drop multiplexer

机译：InP / InGaAsP晶片键合垂直耦合X交叉倍数通道光分插复用器
- 作者：Raburn M.A.;Liu B.;Okuno Y.;Bowers J.E.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
65.Nonlinear terahertz gain estimated from multiple photon-assistedtunneling in resonant tunneling diode

机译：由多个光子辅助估计的非线性太赫兹增益谐振隧穿二极管中的隧穿
- 作者：Asada M.;Sashinaka N.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
66.Ammonia (NH₃) plasma surface passivation of InP/InGaAsheterojunction bipolar transistors

机译：InP / InGaAs的氨（NH _{3 ）等离子体表面钝化异质结双极晶体管}
- 作者：Hong Wang;Geok Ing Ng;Hong Yang;Radhakrishnan K.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
67.Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gassource MBE

机译：气体生长的温度稳定波长TlInGaAs / InP DH LED源MBE
- 作者：Lee H.-J.;Konishi K.;Maeda O.;Mizobata A.;Asami K.;Asahi H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
68.Low internal loss InP/InGaAsP laser diodes fabricated usinginductively coupled plasma etching

机译：使用以下材料制造的低内部损耗InP / InGaAsP激光二极管感应耦合等离子体蚀刻
- 作者：Hamamoto K.;Gini E.;Melchior H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
69.Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramidsformed by selective-area flow rate modulation epitaxy

机译：InP纳米金字塔上InAs量子点的液滴异质外延由选择性区域流速调制外延形成
- 作者：Oga R.;Yamamoto S.;Ohzawa I.;Fujiwara Y.;Takeda Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
70.Influence of electrode width on high-speed performance oftraveling-wave electroabsorption modulators

机译：电极宽度对电极高速性能的影响行波电吸收调制器
- 作者：Irmscher S.;Lewen R.;Eriksson U.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
71.Molecular beam epitaxial growth and characterization ofGaAs_0.5Sb_0.5 layers on (111)B InP substrates

机译：分子束外延生长及表征（111）B InP衬底上的GaAs _{0.5 Sb _{0.5 层}}
- 作者：Higashino T.;Kawamura Y.;Fujimoto M.;Kondo A.;Takasaki H.;Inoue N.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
72.Nonparabolic conduction subbands in InGaAs/InAlAs multi-quantumwells with photocurrent and transmission measurement

机译：InGaAs / InAlAs多量子中的非抛物线导带光电流和透射率测量的井
- 作者：Tanaka K.;Ueki Y.;Shibata K.;Kotera N.;Washima M.;Nakamura H.;Mishima T.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
73.Thermal stability of GaAs/InAs/GaAs heterostructure studied byX-ray crystal truncation rod scattering measurement

机译：GaAs / InAs / GaAs异质结构的热稳定性研究X射线晶体截断棒散射测量
- 作者：Tabuchi M.;Araki M.;Takeda Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
74.Room temperature negative differential resistance with highpeak-to-valley current ratio of CdF₂/CaF₂ resonanttunneling diode on silicon

机译：常温负负电阻高CdF _{2 / CaF _{2 共振峰谷电流比硅上的隧穿二极管}}
- 作者：Watanabe M.;Sakamaki N.;Ishikawa T.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
75.Electronic structures ofGa_1-xIn_xN_yAs_1-y/GaAscompressively strained quantum wells

机译：电子结构Ga _{1-x In _{x N _{y As _{1-y / GaAs压缩应变量子阱}}}}
- 作者：Fan W.J.;Yoon S.F.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
76.Selective formation of InAs single and multiple quantum dots onGaAs wire structures for application of single electron memory

机译：在InAs上选择性形成InAs单量子点和多量子点用于单电子存储的GaAs导线结构
- 作者：Motohisa J.;Terasawa T.;Kusuhara T.;Nakajima F.;Fukui T.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
77.Highly reliable InGaAsP/InP lasers with defect-free regrowthinterfaces formed by newly composed HBr-based solutions

机译：高度可靠的InGaAsP / InP激光器，无缺陷再生长新组成的基于HBr的解决方案形成的接口
- 作者：Shinoda K.;Taike A.;Sato H.;Uchiyama H.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
78.Ultra-efficient X-band and linear-efficient Ka-band poweramplifiers using indium phosphide double heterojunction bipolartransistors

机译：超高效X波段和线性高效Ka波段功率磷化铟双异质结双极放大器晶体管
- 作者：Quach T.;Okamura W.;Gutierrez-Aitken A.;Jenkins T.;Kaneshiro E.;Kehias L.;Sawdai D.;Watson P.;Welch R.;Worley R.;Yen H.C.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
79.2-bit adder carry and sum logic circuits clocking at 19 GHz clockfrequency in transferred substrate HBT technology

机译：2位加法器进位和求和逻辑电路，时钟频率为19 GHz转移底材的频率HBT技术
- 作者：Mathew T.;Jaganathan S.;Scott D.;Krishnan S.;Wei Y.;Urteaga M.;Rodwell M.;Long S.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
80.Charge storage effect of the vertically stacked InAs nanodotsembedded in Al_0.5Ga_0.5As matrix

机译：垂直堆叠的InAs纳米点的电荷存储效应嵌入在Al _{0.5 Ga _{0.5 As矩阵中}}
- 作者：Koike K.;Li S.;Komai H.;Sasa S.;Inoue M.;Yano M.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》
81.Dark current reduction of avalanche photodiode using asymmetricInGaAsP/InAlAs superlattice structure

机译：使用不对称性降低雪崩光电二极管的暗电流InGaAsP / InAlAs超晶格结构
- 作者：Suzuki A.;Yamada A.;Yokotsuka T.;Idota K.;Ohki Y.
- 会议名称：《Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On》