Molecular beam epitaxial growth and characterization ofGaAs_0.5Sb_0.5 layers on (111)B InP substrates

摘要

GaAs_0.5Sb_0.5 layers were grown on (111)Boriented InP substrates by molecular beam epitaxy (MBE). It was foundthat the Sb mole fraction of the (111) samples is higher than that of(100) samples. Furthermore, the band gap energy of the (111) sample wasfound to be larger than that of the (100) sample from photoluminescenceand optical absorption measurements. The mechanism of the band gapenergy shift was discussed based on the spontaneous ordering of alloys