METHOD FOR CONTINUOUSLY GROWING GaN AND GaAs EPITAXIAL LAYERS ON Si (111)/(001) SOI SUBSTRATE OR Si (001)/(111) SOI SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING DEVICE MODULE USING GaN AND GaAs EPITAXIAL LAYERS CONTINUOUSLY FORMED ON Si (111)/(001) SOI SUBSTRATE MANUFACTURED THEREBY

摘要

The present invention relates to a method for growing a semiconductor epitaxial layer on an SOI (silicon (111) layer/insulator/silicon (001) layer) substrate, which comprises: a first step of removing a silicon (111) layer; a second step of depositing an insulating layer; a third step of removing the insulating layer to expose the silicon (111) layer; a fourth step of growing a GaN buffer layer; a fifth step of exposing the GaN buffer layer of a region of a blue LED epitaxial layer; a sixth step of growing the blue LED epitaxial layer; a seventh step of exposing a GaN buffer layer of a region of a green LED epitaxial layer; an eighth step of growing the green LED epitaxial layer on the GaN buffer layer; a ninth step of exposing a silicon (001) layer by patterning a region of a red LED epitaxial layer; a tenth step of growing the red LED epitaxial layer; and an eleventh step of removing the remaining insulating layer. Accordingly, provided is a semiconductor light emitting device having high quality.;COPYRIGHT KIPO 2018