Formation of GaN Nanowires by Ammoniating Ga_2O_3 Films Deposited on Oxidized Al Layers on Si Substrate

摘要

Large quantities of gallium nitride(GaN) nanowires have been prepared via ammoniating the Ga2O3 films deposited on the oxidized aluminum layer at 950 ℃ in a quartz tube. The nanowires have been confirmed as crystalline wurtzite GaN by X-ray diffraction, X-ray photoelectron spectrometry scanning electron microscope and selected-area electron diffraction. Transmission electron microscope(TEM) and scanning electron microscopy(SEM) reveal that the nanowires are amorphous and irregular, with diameters ranging from 30 nm to 80 nm and lengths up to tens of microns. Selected-area electron diffraction indicates that the nanowire with the hexagonal wurtzite structure is the single crystalline. The growth mechanism is discussed briefly.