Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE

摘要

We have investigated influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) suppresses the inclusion of zincblende-GaN(β-GaN) crystal grains beam epitaxy. The substrate nitridation of Si(111) suppresses the inclusion of zincblende-GaN(β-GaN and degrades crystalline quality of and facilitates the epitaxial growth of wurzite-GaN (α-GaN) accompanying the improvement of crystalline quality. On the other hand, the nitridation of Si(001) does not suppress the inclusion of β-GaN and degrades crystalline quality of α-GaN.