Epitaxial growth substrate, method of manufacturing a GaN-based semiconductor layer, GaN-based semiconductor layer, GaN-based semiconductor manufacturing method of the light emitting device and GaN-based semiconductor light-emitting element

摘要

The baseplate for epitaxial growth of this invention, in order 120 degrees at a time to possess the other convex section where each one 3 touches recently the GaN semiconductor the surface part making provision for, the monocrystal section which consists of the material which differs as a surface for epitaxial growth at least, in the direction which differs the plural convex sections and each one which are arranged the plural growth spaces which are encircled by 6 above-mentioned convex sections and, it possesses the unevenness aspect which consists of, above-mentioned monocrystal section has exposed at least in above-mentioned growth space, the GaN semiconductor crystal which c axial orientation is done becoming growth possible from the above-mentioned growth space with thatIt is.