Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μmlasers using metal-organic vapor-phase epitaxy

摘要

GaInNAs/GaAs quantum-well (QW) lasers emitting at 1.3 μm weregrown using metal-organic vapor-phase epitaxy (MOVPE) in the limit ofvery low growth rate and temperature. The material was characterized byphotoluminescence (PL) spectroscopy as well as by implementation inbroad-area (BA) edge-emitting lasers. While the PL intensity was foundto decrease by more than two orders of magnitude between 1175 and 1350nm, the corresponding BA laser threshold current showed a much moremodest increase. For a 1.28-μm laser the transparency current was 0.8kA/cm2, the slope efficiency 0.24 W/A per facet and T₀=100 K.Comparison between PL emission properties and BA laser performancerevealed a complex relationship. A high PL intensity does notnecessarily lead to low threshold-current lasers. In these cases, theFWHM seems to be the more relevant parameter for QW optimization