Fabrication of InGaAsP/InP Mach-Zehnder interferometer opticalamplifier switches by metalorganic vapor phase selective area epitaxy

摘要

Recent ultra-fast optical-fiber communication systems requirevarious functional optical components, such as all optical switches. Wehave fabricated InGaAsP/InP Mach-Zehnder interferometer optical switchesmonolithically integrated with semiconductor optical amplifiers (SOAs)using a single-step MOVPE selective area growth and two types ofpatterning and etching process. Preliminary optical switching experimentrevealed large carrier-induced index change in the selective-area-grownmultiple quantum well SOAs. Furthermore, all optical switchingexperiment has successfully been demonstrated in these fabricateddevices