Fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with a high phase modulation efficiency

摘要

PURPOSE: A method for fabricating epi-layer of an InGaAsP/InP ridge waveguide phase modulator having high phase modulation efficiency is provided to reduce the manufacturing cost and enhance the reliability by using a semiconductor including chemical compounds of a third and a fourth group. CONSTITUTION: A first cladding layer(20) of N-InP is formed on an N¬+-Inp substrate(10). A first waveguide layer(30) of n-InGaAsP and a second waveguide layer(40) of p-InGaAsP are formed on the first cladding layer sequentially. A second cladding layer(50) of P-InP and a third cladding layer(60) of P-InP are sequentially formed on the second waveguide layer. A p+-InGaAs electrode layer(70) is formed on the third cladding layer.